JPS6421965A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS6421965A
JPS6421965A JP62178258A JP17825887A JPS6421965A JP S6421965 A JPS6421965 A JP S6421965A JP 62178258 A JP62178258 A JP 62178258A JP 17825887 A JP17825887 A JP 17825887A JP S6421965 A JPS6421965 A JP S6421965A
Authority
JP
Japan
Prior art keywords
gate electrode
mos transistor
polycrystalline silicon
silicon layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178258A
Other languages
Japanese (ja)
Inventor
Masami Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178258A priority Critical patent/JPS6421965A/en
Publication of JPS6421965A publication Critical patent/JPS6421965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

PURPOSE:To manufacture a high speed operational MOS transistor formed of an upper conductive layer in high reliability by a method wherein the section of a gate electrode with the conductive layer provided thereon through the intermediary of an interlayer insulating film is taken into stepwise shape from both ends to the central part. CONSTITUTION:Within a MOS transistor 10a provided with a gate electrode 7a comprising polycrystalline silicon layer provided corresponding to an element forming region through the intermediary of a gate insulating film 6a on one main surface of a semiconductor substrate 1a and a conductive layer (source electrode) 9a through the intermediary of an interlayer insulating film 8a on the surface of the gate electrode 7a, the section of said gate electrode 7a is taken into stepwise shape from both ends to the central part. For example, both sides of the polycrystalline silicon layer as the gate electrode 7a of a vertical MOS transistor 10a composed as shown in figure are formed in thick ness of around 500nm in no danger of the step disconnection of the upper Al layer 9a, the shortcircuit, etc., between the Al layer 9a and the polycrystalline silicon layer furthermore, the stepwise central part is formed of the polycrystalline silicon layer in around the same thickness.
JP62178258A 1987-07-16 1987-07-16 Mos transistor Pending JPS6421965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178258A JPS6421965A (en) 1987-07-16 1987-07-16 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178258A JPS6421965A (en) 1987-07-16 1987-07-16 Mos transistor

Publications (1)

Publication Number Publication Date
JPS6421965A true JPS6421965A (en) 1989-01-25

Family

ID=16045348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178258A Pending JPS6421965A (en) 1987-07-16 1987-07-16 Mos transistor

Country Status (1)

Country Link
JP (1) JPS6421965A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330583A (en) * 1995-05-31 1996-12-13 Nec Corp Semiconductor device and its manufacture
WO2005057664A3 (en) * 2003-12-08 2006-04-13 Chau Duc Quang Power mosfet and methods of making same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330583A (en) * 1995-05-31 1996-12-13 Nec Corp Semiconductor device and its manufacture
WO2005057664A3 (en) * 2003-12-08 2006-04-13 Chau Duc Quang Power mosfet and methods of making same

Similar Documents

Publication Publication Date Title
KR890003038A (en) Semiconductor manufacturing process with pedestal structure
JPS5736844A (en) Semiconductor device
KR890008984A (en) Semiconductor integrated circuit device and manufacturing method thereof
KR900019197A (en) Method of forming semiconductor connection device
JPS6417473A (en) Manufacture of semiconductor device
JPS6465873A (en) Manufacture of semiconductor element
JPS6421965A (en) Mos transistor
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
JPS6459940A (en) Manufacture of semiconductor device
JPS5750449A (en) Semiconductor device and manufacture therefor
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS6457671A (en) Semiconductor device and manufacture thereof
JPS56146254A (en) Manufacture of semiconductor device
KR960006339B1 (en) Fabricating method of semiconductor device
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS56138946A (en) Semiconductor device
JPS56165360A (en) Manufacture of semiconductor device
JPS57147252A (en) Multilayer wiring method
JPS5797649A (en) Manufacture of semiconductor device
JPS57173958A (en) Semiconductor ic device
JPS6455853A (en) Semiconductor device and manufacture thereof
JPS56144558A (en) Semiconductor device
JPS577948A (en) Semiconductor device and its manufacture
JPS55145356A (en) Fabricating method of semiconductor device