JPS5750449A - Semiconductor device and manufacture therefor - Google Patents

Semiconductor device and manufacture therefor

Info

Publication number
JPS5750449A
JPS5750449A JP12622380A JP12622380A JPS5750449A JP S5750449 A JPS5750449 A JP S5750449A JP 12622380 A JP12622380 A JP 12622380A JP 12622380 A JP12622380 A JP 12622380A JP S5750449 A JPS5750449 A JP S5750449A
Authority
JP
Japan
Prior art keywords
smoothing
wiring
melting point
drain
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12622380A
Other languages
Japanese (ja)
Inventor
Hirohiko Yamamoto
Kuniyuki Hamano
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12622380A priority Critical patent/JPS5750449A/en
Publication of JPS5750449A publication Critical patent/JPS5750449A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the stepped disconnection of wiring and to maintain thermal treatment temperature for smoothing at a low temperature causing no influence on Al wiring and a diffusion region as well, by smoothing the level difference of the contact hole sections and the like of insulating layers in the wiring on a semiconductor substrate. CONSTITUTION:A field insulating film 3, a gate insulating film 4, and a polysilicon gate electrode 5 are formed on a semiconductor substrate 1 and in a MOS semiconductor device and the like having a source 6 and a drain 7 formed by using the films 3, 4, and electrodes 5 as masks for diffusion, a glass film composing lead oxide as a main component and having a low melting point of melting point 350-600 deg.C is formed on the surface of the device by a CVD method and the like, and contact holes are formed on the source and the drain after smoothing the surface of the device by heating flow and heating flow is again done and wiring 13 is formed by smoothing the end fringe sections of the contact holes. In multilayer interconnection, with the melting point decreased from the lower layer in order, the deformation of the insulating layer at the lower layer and stress can be prevented.
JP12622380A 1980-09-11 1980-09-11 Semiconductor device and manufacture therefor Pending JPS5750449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12622380A JPS5750449A (en) 1980-09-11 1980-09-11 Semiconductor device and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12622380A JPS5750449A (en) 1980-09-11 1980-09-11 Semiconductor device and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS5750449A true JPS5750449A (en) 1982-03-24

Family

ID=14929791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12622380A Pending JPS5750449A (en) 1980-09-11 1980-09-11 Semiconductor device and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5750449A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190043A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Multi-layer wiring
JPS61154149A (en) * 1984-12-27 1986-07-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS62281350A (en) * 1986-05-29 1987-12-07 Toshiba Corp Semiconductor device and manufacture thereof
JPH05267298A (en) * 1992-03-17 1993-10-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506143U (en) * 1973-05-11 1975-01-22
JPS506143A (en) * 1973-05-21 1975-01-22
JPS5055279A (en) * 1973-09-12 1975-05-15
JPS51134085A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS5313766A (en) * 1976-07-23 1978-02-07 Hitachi Ltd Automatic continuous part sorting device
JPS5429569A (en) * 1977-08-09 1979-03-05 Oki Electric Ind Co Ltd Manufacture for mos type semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506143U (en) * 1973-05-11 1975-01-22
JPS506143A (en) * 1973-05-21 1975-01-22
JPS5055279A (en) * 1973-09-12 1975-05-15
JPS51134085A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS5313766A (en) * 1976-07-23 1978-02-07 Hitachi Ltd Automatic continuous part sorting device
JPS5429569A (en) * 1977-08-09 1979-03-05 Oki Electric Ind Co Ltd Manufacture for mos type semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190043A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Multi-layer wiring
JPS61154149A (en) * 1984-12-27 1986-07-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS62281350A (en) * 1986-05-29 1987-12-07 Toshiba Corp Semiconductor device and manufacture thereof
JPH05267298A (en) * 1992-03-17 1993-10-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5930674A (en) * 1992-03-17 1999-07-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved planarization properties

Similar Documents

Publication Publication Date Title
JPS5736844A (en) Semiconductor device
JPS5530846A (en) Method for manufacturing fixed memory
KR890003048A (en) Manufacturing method of MOS semiconductor device
JPS5750449A (en) Semiconductor device and manufacture therefor
EP0081226A3 (en) Method of making semiconductor device
JPS56164578A (en) Manufacture of mos type semiconductor device
JPS5643749A (en) Semiconductor device and its manufacture
JPS55157241A (en) Manufacture of semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
JPS5785246A (en) Semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
JPS5750452A (en) Semiconductor device
JPS6421965A (en) Mos transistor
JPS5456357A (en) Production of semiconductor device
JPS56150853A (en) Manufacture of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS6457671A (en) Semiconductor device and manufacture thereof
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS57141966A (en) Manufacture of semiconductor device
JPS54103672A (en) Production of semiconductor device
JPS57136370A (en) Manufacture of semiconductor device
JPS5793574A (en) Manufacture of mis type semiconductor device
JPS5753958A (en) Semiconductor device
JPS56133868A (en) Manufacture of mos type semiconductor device
JPS57194548A (en) Manufacture of semiconductor device