JPS5797649A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797649A
JPS5797649A JP17516280A JP17516280A JPS5797649A JP S5797649 A JPS5797649 A JP S5797649A JP 17516280 A JP17516280 A JP 17516280A JP 17516280 A JP17516280 A JP 17516280A JP S5797649 A JPS5797649 A JP S5797649A
Authority
JP
Japan
Prior art keywords
metal wiring
insulation film
film
oxide film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17516280A
Other languages
Japanese (ja)
Other versions
JPS6161698B2 (en
Inventor
Kunio Aomura
Toshio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17516280A priority Critical patent/JPS5797649A/en
Publication of JPS5797649A publication Critical patent/JPS5797649A/en
Publication of JPS6161698B2 publication Critical patent/JPS6161698B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent disconnection of an upper layer conductive film formed on an insulation film between layers, by forming with plains having a certain tilt angle, the sides of steps of the insulation film between layers on lower metal layer conductive film. CONSTITUTION:The first layer of metal wiring 33, 33' are selectively formed on a thermal oxide film 32 having a window selectively provided by covering a semiconductor substrate 31. An interlayer insulation film 34 is formed on the metal wiring 33, 33' covering the oxide film 32 and the second layer of the metal wiring 35 is formed electrically connecting to the first metal wiring via a window selectively made in the insulation film 34. The cracks on the second metal wiring 35 is prevented by composing with the plains having a certain tilt angle the sides of steps 37, 37', 37'' on the surface of the interlayer insulation film which are produced on the first metal wiring 33, 33' and other thermal oxide film 32.
JP17516280A 1980-12-11 1980-12-11 Manufacture of semiconductor device Granted JPS5797649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17516280A JPS5797649A (en) 1980-12-11 1980-12-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17516280A JPS5797649A (en) 1980-12-11 1980-12-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5797649A true JPS5797649A (en) 1982-06-17
JPS6161698B2 JPS6161698B2 (en) 1986-12-26

Family

ID=15991341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17516280A Granted JPS5797649A (en) 1980-12-11 1980-12-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797649A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893354A (en) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6233483A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol Superconductive integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0535512Y2 (en) * 1990-05-02 1993-09-08

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156375A (en) * 1976-06-22 1977-12-26 Nippon Electric Co Method of producing multilayer circuit substrate
JPS5328530A (en) * 1976-08-30 1978-03-16 Hitachi Ltd Method of etching surfaces of solids

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156375A (en) * 1976-06-22 1977-12-26 Nippon Electric Co Method of producing multilayer circuit substrate
JPS5328530A (en) * 1976-08-30 1978-03-16 Hitachi Ltd Method of etching surfaces of solids

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893354A (en) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH033382B2 (en) * 1981-11-30 1991-01-18 Mitsubishi Electric Corp
JPS6233483A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol Superconductive integrated circuit

Also Published As

Publication number Publication date
JPS6161698B2 (en) 1986-12-26

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