JPS5732663A - Resistance element and its manufacture - Google Patents
Resistance element and its manufactureInfo
- Publication number
- JPS5732663A JPS5732663A JP10853880A JP10853880A JPS5732663A JP S5732663 A JPS5732663 A JP S5732663A JP 10853880 A JP10853880 A JP 10853880A JP 10853880 A JP10853880 A JP 10853880A JP S5732663 A JPS5732663 A JP S5732663A
- Authority
- JP
- Japan
- Prior art keywords
- nitrified
- injected
- semiconductor layer
- silicon nitride
- conductive layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- -1 Nitrogen ions Chemical class 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high resistor stably in excellent reproducibility even by a minute occupying area by putting an insulating film with an opening section between conductive layers and forming a resistance film, which can contact with the upper and lower conductive layers, in the opening section. CONSTITUTION:Nitrogen ions are injected to the surface of a semiconductor layer 2 and the sections where aluminum electrodes are formed are nitrified before shaping aluminum electrodes 4, 4'. When ions with 40KeV energy and of the amount of N<+> doped in 1X10<17>pcs./cm<2> are injected, the surfaces of the semiconductor layer 2 are nitrified, the silicon nitride films 7 with approximately 100-200Angstrom thickness are formed to the surfaces, and the silicon nitride films 7 function as the high resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10853880A JPS5732663A (en) | 1980-08-04 | 1980-08-04 | Resistance element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10853880A JPS5732663A (en) | 1980-08-04 | 1980-08-04 | Resistance element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732663A true JPS5732663A (en) | 1982-02-22 |
Family
ID=14487344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10853880A Pending JPS5732663A (en) | 1980-08-04 | 1980-08-04 | Resistance element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732663A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291956A (en) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JP2016015512A (en) * | 2008-09-25 | 2016-01-28 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
-
1980
- 1980-08-04 JP JP10853880A patent/JPS5732663A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291956A (en) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JP2016015512A (en) * | 2008-09-25 | 2016-01-28 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
| US9960116B2 (en) | 2008-09-25 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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