JPS5553452A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5553452A JPS5553452A JP12624978A JP12624978A JPS5553452A JP S5553452 A JPS5553452 A JP S5553452A JP 12624978 A JP12624978 A JP 12624978A JP 12624978 A JP12624978 A JP 12624978A JP S5553452 A JPS5553452 A JP S5553452A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- resistance
- terminals
- disposed
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To stabilize characteristics by coating a part between terminals of poly Si resistance element with metal through insulative film. CONSTITUTION:In regard to high resistance poly Si element 3 disposed on SiO2 film 2 on Si substrate 1, almost part between terminals of the element 3 is coated with Al 5 through layers-insulative film 4. Al wiring layer 6 is disposed on a pair of the terminal and Si3N4 is formed by plasma or SiO2 is formed by high frequency spattering as protective layer 7. Thus change of resistance value of poly Si resistance element can be controlled very efficiently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12624978A JPS5553452A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12624978A JPS5553452A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5553452A true JPS5553452A (en) | 1980-04-18 |
Family
ID=14930488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12624978A Pending JPS5553452A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553452A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0054471A2 (en) * | 1980-12-12 | 1982-06-23 | Fujitsu Limited | Semiconductor resistor element |
US4455567A (en) * | 1981-11-27 | 1984-06-19 | Hughes Aircraft Company | Polycrystalline semiconductor resistor having a noise reducing field plate |
US4528582A (en) * | 1983-09-21 | 1985-07-09 | General Electric Company | Interconnection structure for polycrystalline silicon resistor and methods of making same |
JPH07153921A (en) * | 1993-07-23 | 1995-06-16 | Hyundai Electron Ind Co Ltd | Semiconductor device and manufacture thereof |
US5500553A (en) * | 1992-08-12 | 1996-03-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5055281A (en) * | 1973-09-12 | 1975-05-15 | ||
JPS5147371A (en) * | 1974-10-21 | 1976-04-22 | Fujitsu Ltd | HANDOTA ISOCHI |
-
1978
- 1978-10-16 JP JP12624978A patent/JPS5553452A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5055281A (en) * | 1973-09-12 | 1975-05-15 | ||
JPS5147371A (en) * | 1974-10-21 | 1976-04-22 | Fujitsu Ltd | HANDOTA ISOCHI |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0054471A2 (en) * | 1980-12-12 | 1982-06-23 | Fujitsu Limited | Semiconductor resistor element |
US4455567A (en) * | 1981-11-27 | 1984-06-19 | Hughes Aircraft Company | Polycrystalline semiconductor resistor having a noise reducing field plate |
US4528582A (en) * | 1983-09-21 | 1985-07-09 | General Electric Company | Interconnection structure for polycrystalline silicon resistor and methods of making same |
US5500553A (en) * | 1992-08-12 | 1996-03-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes |
US5956592A (en) * | 1992-08-12 | 1999-09-21 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processes |
JPH07153921A (en) * | 1993-07-23 | 1995-06-16 | Hyundai Electron Ind Co Ltd | Semiconductor device and manufacture thereof |
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