JPS5742159A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5742159A
JPS5742159A JP11761480A JP11761480A JPS5742159A JP S5742159 A JPS5742159 A JP S5742159A JP 11761480 A JP11761480 A JP 11761480A JP 11761480 A JP11761480 A JP 11761480A JP S5742159 A JPS5742159 A JP S5742159A
Authority
JP
Japan
Prior art keywords
polycrystalline
film
resistor
constitution
stepped parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11761480A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11761480A priority Critical patent/JPS5742159A/en
Publication of JPS5742159A publication Critical patent/JPS5742159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To enhance the integrating degree with the same or superior characteritics as or more than those of conventional devices by providing stepped parts on a polycrystalline Si resistor, and increasing the effective length or sheet resistance. CONSTITUTION:The polycrystalline Si film 13 is selectively formed on a field oxide film 12 on a P type Si substrate 11. After the heat oxidation, the polycrystalline Si 13 is coated by an SiO2 film 14, polycrystalline Si 15 is deposited, photoetching is performed, and the resistor is formed. In this constitution, the length of the resistor is elongated by the stepped parts formed by the polycrystalline Si film 13 and SiO2 film 14, resistance value is increased, consumption of current is decreased, and the integrating degree can be enhanced.
JP11761480A 1980-08-26 1980-08-26 Semiconductor device Pending JPS5742159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11761480A JPS5742159A (en) 1980-08-26 1980-08-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11761480A JPS5742159A (en) 1980-08-26 1980-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5742159A true JPS5742159A (en) 1982-03-09

Family

ID=14716107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11761480A Pending JPS5742159A (en) 1980-08-26 1980-08-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5742159A (en)

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