JPS56133863A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56133863A JPS56133863A JP3644780A JP3644780A JPS56133863A JP S56133863 A JPS56133863 A JP S56133863A JP 3644780 A JP3644780 A JP 3644780A JP 3644780 A JP3644780 A JP 3644780A JP S56133863 A JPS56133863 A JP S56133863A
- Authority
- JP
- Japan
- Prior art keywords
- pwell
- resistor
- channel
- aluminum
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To stabilize the resistance value of the Pwell resistor of an N channel MOS transistor by coating said resistor with polycrystalline silicon having a potential maintained at the maximum potential applied to the transistor so that no channel is formed. CONSTITUTION:Polycrystalline silicon 17 is provided over the Pwell resistor 16 of an N channel MOS transistor formed on an N type substrate in a semiconductor device having a silicon gate type complementary MOS integrated circuit, and the potential of said polycrystalline silicon is maintained at the maximum potential applied to said MOS integrated circuit through an aluminum 20 and a contact hole 19. Therefore, if the potential of an aluminum 12 varies, the Pwell resistance value has no change. Moreover, because the voltage between the Pwell resistor 16 and the portion of the aluminum 12 overlapping therewith never exceeds the threshold voltage, no channel is formed therebetween. Thereby, it is possible to form a stable Pwell resistor, which never be affected from the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3644780A JPS56133863A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3644780A JPS56133863A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56133863A true JPS56133863A (en) | 1981-10-20 |
Family
ID=12470060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3644780A Pending JPS56133863A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133863A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295445A (en) * | 1985-12-20 | 1987-12-22 | Sanyo Electric Co Ltd | Semiconductor integrated circuit device |
| US4853759A (en) * | 1986-09-29 | 1989-08-01 | American Microsystems, Inc. | Integrated circuit filter with reduced die area |
| JP2002158290A (en) * | 2000-08-30 | 2002-05-31 | Agere Systems Guardian Corp | Field plate resistor having route formation region increased above |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4985984A (en) * | 1972-12-20 | 1974-08-17 |
-
1980
- 1980-03-22 JP JP3644780A patent/JPS56133863A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4985984A (en) * | 1972-12-20 | 1974-08-17 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295445A (en) * | 1985-12-20 | 1987-12-22 | Sanyo Electric Co Ltd | Semiconductor integrated circuit device |
| JPH0514429B2 (en) * | 1985-12-20 | 1993-02-25 | Sanyo Electric Co | |
| US4853759A (en) * | 1986-09-29 | 1989-08-01 | American Microsystems, Inc. | Integrated circuit filter with reduced die area |
| JP2002158290A (en) * | 2000-08-30 | 2002-05-31 | Agere Systems Guardian Corp | Field plate resistor having route formation region increased above |
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