JPS55118676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55118676A
JPS55118676A JP2709879A JP2709879A JPS55118676A JP S55118676 A JPS55118676 A JP S55118676A JP 2709879 A JP2709879 A JP 2709879A JP 2709879 A JP2709879 A JP 2709879A JP S55118676 A JPS55118676 A JP S55118676A
Authority
JP
Japan
Prior art keywords
threshold voltage
mos transistor
width
length
miniaturization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2709879A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Junichi Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2709879A priority Critical patent/JPS55118676A/en
Publication of JPS55118676A publication Critical patent/JPS55118676A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the variation in the threshold voltage due to miniaturization of a MOS transistor by cancelling the reduced component of the threshold voltage due to short channel length effect by the increased component due to narrow channel width effect. CONSTITUTION:A MOS transistor having equal channel length L to the channel width W on a substrate is formed as a basic unit, and various MOS transistors are formed in size in combination in the direction W and the direction L. The threshold voltage VTH of the MOS transistor is lowered due to the integration of the channel length, and increased due to the integration of the channel width W. Accordingly, the threshold voltage VTH does not depend upon the length L and the width W by so forming the transistor as to cancel the one with the other. Thus, it can reduce the variation in the threshold voltage due to the miniaturization of the MOS transistor.
JP2709879A 1979-03-07 1979-03-07 Semiconductor device Pending JPS55118676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2709879A JPS55118676A (en) 1979-03-07 1979-03-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2709879A JPS55118676A (en) 1979-03-07 1979-03-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55118676A true JPS55118676A (en) 1980-09-11

Family

ID=12211601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2709879A Pending JPS55118676A (en) 1979-03-07 1979-03-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118676A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040283A (en) * 1973-07-28 1975-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040283A (en) * 1973-07-28 1975-04-12

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