JPS5275187A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5275187A
JPS5275187A JP50151269A JP15126975A JPS5275187A JP S5275187 A JPS5275187 A JP S5275187A JP 50151269 A JP50151269 A JP 50151269A JP 15126975 A JP15126975 A JP 15126975A JP S5275187 A JPS5275187 A JP S5275187A
Authority
JP
Japan
Prior art keywords
mos type
semiconductor device
type semiconductor
oxide film
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50151269A
Other languages
Japanese (ja)
Inventor
Yoshihiro Osada
Masanori Tosa
Haruo Nakayama
Akihiro Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50151269A priority Critical patent/JPS5275187A/en
Publication of JPS5275187A publication Critical patent/JPS5275187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To protect a gate oxide film by making the thickness of the gate oxide film of a second MOS type transistor thicker than that of a first MOS type transistor to increase voltage gain and making the threshold voltage higher than normal driving voltage and lower than the gate oxide film breakdown voltage of the first MOS type transistor.
JP50151269A 1975-12-18 1975-12-18 Mos type semiconductor device Pending JPS5275187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50151269A JPS5275187A (en) 1975-12-18 1975-12-18 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50151269A JPS5275187A (en) 1975-12-18 1975-12-18 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5275187A true JPS5275187A (en) 1977-06-23

Family

ID=15514962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50151269A Pending JPS5275187A (en) 1975-12-18 1975-12-18 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5275187A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136278A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device
JPS54159188A (en) * 1978-06-06 1979-12-15 Nec Corp Semiconductor device
JPS6011536U (en) * 1983-06-30 1985-01-26 三菱電機株式会社 Field effect transistor drive device
JPS63176012A (en) * 1987-01-16 1988-07-20 Mitsubishi Electric Corp Mis transistor circuit
JPH02277265A (en) * 1989-04-18 1990-11-13 Nec Corp Input protecting circuit for semiconductor integrated circuit
JPH03117017A (en) * 1989-09-28 1991-05-17 Nec Corp Transistor output circuit
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136278A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device
JPS6146986B2 (en) * 1978-04-14 1986-10-16 Nippon Electric Co
JPS54159188A (en) * 1978-06-06 1979-12-15 Nec Corp Semiconductor device
JPS6011536U (en) * 1983-06-30 1985-01-26 三菱電機株式会社 Field effect transistor drive device
JPS63176012A (en) * 1987-01-16 1988-07-20 Mitsubishi Electric Corp Mis transistor circuit
JPH02277265A (en) * 1989-04-18 1990-11-13 Nec Corp Input protecting circuit for semiconductor integrated circuit
JPH03117017A (en) * 1989-09-28 1991-05-17 Nec Corp Transistor output circuit
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge

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