JPS54136278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54136278A
JPS54136278A JP4450478A JP4450478A JPS54136278A JP S54136278 A JPS54136278 A JP S54136278A JP 4450478 A JP4450478 A JP 4450478A JP 4450478 A JP4450478 A JP 4450478A JP S54136278 A JPS54136278 A JP S54136278A
Authority
JP
Japan
Prior art keywords
transistor
accompanied
resistor
resistors
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4450478A
Other languages
Japanese (ja)
Other versions
JPS6146986B2 (en
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4450478A priority Critical patent/JPS54136278A/en
Publication of JPS54136278A publication Critical patent/JPS54136278A/en
Publication of JPS6146986B2 publication Critical patent/JPS6146986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the strength against damage to external abnormal voltages, by connecting the transistor having high threshold voltage and diffusion resistance formed on the same semiconductor substrate to the transistor to be protected. CONSTITUTION:To the input transistor T1 to be protected, the resistor R1 having accompanied diode D1 and capacitor C1 is connected. Further, the resistor R2 having accompanied D2 and C2 and the resistor R3 accompanied with D3 and C3 are connected in series, and between the junction of the resistors R1 and R2 and the junction of R2 and R3, transistor Ts having greater capacitance Cs between the substrate and the junctions is provided. The transistor Ts plays sufficient protective functions, the gate oxide film is made thick and the threshold voltage is remarkably made greater than that of the transistor T1. Thus, transistors T1 and T3 are provided on one semiconductor substrate, forming greater capacitance Cs to the source diffusion layer 12 of Ts, and the resistors R1 to R3 are constituted with the diffusion resistance layers 5 to 7.
JP4450478A 1978-04-14 1978-04-14 Semiconductor device Granted JPS54136278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62202930A Division JPS63146469A (en) 1987-08-14 1987-08-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54136278A true JPS54136278A (en) 1979-10-23
JPS6146986B2 JPS6146986B2 (en) 1986-10-16

Family

ID=12693373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4450478A Granted JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54136278A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
JPS58199969A (en) * 1982-05-15 1983-11-21 宗平　忠晴 Parking box
JPS59112708A (en) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp Input protecting circuit
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
JPS60142556A (en) * 1983-12-28 1985-07-27 Toshiba Corp Input protective circuit
JPS6134967A (en) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Input protecting structure for vlsi integrated circuit device
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS6215851A (en) * 1985-07-12 1987-01-24 Sanyo Electric Co Ltd Semiconductor device
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
JPH0214792B2 (en) * 1980-12-26 1990-04-10 Fujitsu Ltd
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
JPS58199969A (en) * 1982-05-15 1983-11-21 宗平　忠晴 Parking box
JPS59112708A (en) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp Input protecting circuit
JPS60142556A (en) * 1983-12-28 1985-07-27 Toshiba Corp Input protective circuit
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JPS6134967A (en) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Input protecting structure for vlsi integrated circuit device
JPH0236071B2 (en) * 1984-05-03 1990-08-15 Digital Equipment Corp
US4952994A (en) * 1984-05-03 1990-08-28 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
US5017985A (en) * 1984-05-03 1991-05-21 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS6215851A (en) * 1985-07-12 1987-01-24 Sanyo Electric Co Ltd Semiconductor device
JPH0351308B2 (en) * 1985-07-12 1991-08-06 Sanyo Electric Co
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Also Published As

Publication number Publication date
JPS6146986B2 (en) 1986-10-16

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