JPS53145486A - Protecting circuit using insulated gate field effect type transistors - Google Patents

Protecting circuit using insulated gate field effect type transistors

Info

Publication number
JPS53145486A
JPS53145486A JP6078377A JP6078377A JPS53145486A JP S53145486 A JPS53145486 A JP S53145486A JP 6078377 A JP6078377 A JP 6078377A JP 6078377 A JP6078377 A JP 6078377A JP S53145486 A JPS53145486 A JP S53145486A
Authority
JP
Japan
Prior art keywords
field effect
insulated gate
effect type
type transistors
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6078377A
Other languages
Japanese (ja)
Inventor
Haruo Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6078377A priority Critical patent/JPS53145486A/en
Publication of JPS53145486A publication Critical patent/JPS53145486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Abstract

PURPOSE:To effectively prevent the dielectric breakdown of gate insulating film by increasing the threshold voltage of a parasitic MISFET so that it is operated at a high supply voltage and decreasing the threshold voltage of a protecting MISFET.
JP6078377A 1977-05-24 1977-05-24 Protecting circuit using insulated gate field effect type transistors Pending JPS53145486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6078377A JPS53145486A (en) 1977-05-24 1977-05-24 Protecting circuit using insulated gate field effect type transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6078377A JPS53145486A (en) 1977-05-24 1977-05-24 Protecting circuit using insulated gate field effect type transistors

Publications (1)

Publication Number Publication Date
JPS53145486A true JPS53145486A (en) 1978-12-18

Family

ID=13152224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6078377A Pending JPS53145486A (en) 1977-05-24 1977-05-24 Protecting circuit using insulated gate field effect type transistors

Country Status (1)

Country Link
JP (1) JPS53145486A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598867A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Protecting device
JPS5773976A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Mos type semiconductor device
US4697199A (en) * 1981-01-26 1987-09-29 U.S. Philips Corporation Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598867A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Protecting device
JPS5773976A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Mos type semiconductor device
US4697199A (en) * 1981-01-26 1987-09-29 U.S. Philips Corporation Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge

Similar Documents

Publication Publication Date Title
MY8200020A (en) Semiconductor integrated circuit device composed of insulated gate field effect transistors
JPS5366181A (en) High dielectric strength mis type transistor
JPS54881A (en) Semiconductor device
JPS5222480A (en) Insulating gate field effect transistor
JPS52106688A (en) Field-effect transistor
JPS53145486A (en) Protecting circuit using insulated gate field effect type transistors
JPS5275187A (en) Mos type semiconductor device
JPS52127149A (en) Semiconductor circuit
JPS5240981A (en) Insulation gate type field effect transistor circuit
JPS5214345A (en) Transistor sparking circuit
JPS51111042A (en) Gate circuit
JPS51147972A (en) Insulated gate field effect semiconductor device
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS52103974A (en) Semicondcutor integrated circuit device
JPS53103371A (en) Field effect transistor complementary circuit
JPS5315082A (en) Complementary type insulated gate field effect transistor circuit
JPS5667962A (en) Gate protection circuit of mos field effect transistor
JPS53114683A (en) Field effect transistor of insulating gate type
JPS5257785A (en) Gate insulated field effect transistor integrated circuit
JPS51141582A (en) Field effect transistor with high withstand voltage
JPS5371573A (en) Field effect transistor of isolating gate type
JPS51137385A (en) Complementary type insulating gate field effect semi conductor device
JPS53105985A (en) Conmplementary-type insulating gate field effect transistor
JPS5372475A (en) Field effect transistor
JPS51111043A (en) Mis logical circuit