JPS5257785A - Gate insulated field effect transistor integrated circuit - Google Patents

Gate insulated field effect transistor integrated circuit

Info

Publication number
JPS5257785A
JPS5257785A JP50133696A JP13369675A JPS5257785A JP S5257785 A JPS5257785 A JP S5257785A JP 50133696 A JP50133696 A JP 50133696A JP 13369675 A JP13369675 A JP 13369675A JP S5257785 A JPS5257785 A JP S5257785A
Authority
JP
Japan
Prior art keywords
gate
integrated circuit
field effect
effect transistor
transistor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50133696A
Other versions
JPS60786B2 (en
Inventor
Mitsuo Isobe
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP50133696A priority Critical patent/JPS60786B2/ja
Publication of JPS5257785A publication Critical patent/JPS5257785A/en
Publication of JPS60786B2 publication Critical patent/JPS60786B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Abstract

PURPOSE:To protect the gate of an input stage MOS transistor against electrostatic breakdown even if the dielectric strength of gate is low, by interposing a protecting IGFET which is held turned on by the application of a specified bias on its gate, between the gate of a driving IGFET for the input stage and a signal input end.
JP50133696A 1975-11-07 1975-11-07 Expired JPS60786B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50133696A JPS60786B2 (en) 1975-11-07 1975-11-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50133696A JPS60786B2 (en) 1975-11-07 1975-11-07

Publications (2)

Publication Number Publication Date
JPS5257785A true JPS5257785A (en) 1977-05-12
JPS60786B2 JPS60786B2 (en) 1985-01-10

Family

ID=15110730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50133696A Expired JPS60786B2 (en) 1975-11-07 1975-11-07

Country Status (1)

Country Link
JP (1) JPS60786B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132562A (en) * 1984-07-25 1986-02-15 Hitachi Ltd Semiconductor device
JPS63164258A (en) * 1986-12-25 1988-07-07 Fujitsu Bui Lsi Kk Input/output circuit characterized by high breakdown strength
JPH02246265A (en) * 1989-02-01 1990-10-02 Mitel Corp Circuit for protecting cmos integrated circuit against electrostatic discharge
US6812766B2 (en) 2001-05-22 2004-11-02 Matsushita Electric Industrial Co., Ltd. Input/output circuit of semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132562A (en) * 1984-07-25 1986-02-15 Hitachi Ltd Semiconductor device
JPS63164258A (en) * 1986-12-25 1988-07-07 Fujitsu Bui Lsi Kk Input/output circuit characterized by high breakdown strength
JPH02246265A (en) * 1989-02-01 1990-10-02 Mitel Corp Circuit for protecting cmos integrated circuit against electrostatic discharge
US6812766B2 (en) 2001-05-22 2004-11-02 Matsushita Electric Industrial Co., Ltd. Input/output circuit of semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS60786B2 (en) 1985-01-10

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