JPS5240981A - Insulation gate type field effect transistor circuit - Google Patents

Insulation gate type field effect transistor circuit

Info

Publication number
JPS5240981A
JPS5240981A JP50115974A JP11597475A JPS5240981A JP S5240981 A JPS5240981 A JP S5240981A JP 50115974 A JP50115974 A JP 50115974A JP 11597475 A JP11597475 A JP 11597475A JP S5240981 A JPS5240981 A JP S5240981A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
transistor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50115974A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Kitaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50115974A priority Critical patent/JPS5240981A/en
Publication of JPS5240981A publication Critical patent/JPS5240981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:A protection diode is built between gate and source electrodes or between drain and source electrodes, whereby an IGFET which prevents breakdown of junction is obtained.
JP50115974A 1975-09-27 1975-09-27 Insulation gate type field effect transistor circuit Pending JPS5240981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50115974A JPS5240981A (en) 1975-09-27 1975-09-27 Insulation gate type field effect transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50115974A JPS5240981A (en) 1975-09-27 1975-09-27 Insulation gate type field effect transistor circuit

Publications (1)

Publication Number Publication Date
JPS5240981A true JPS5240981A (en) 1977-03-30

Family

ID=14675725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50115974A Pending JPS5240981A (en) 1975-09-27 1975-09-27 Insulation gate type field effect transistor circuit

Country Status (1)

Country Link
JP (1) JPS5240981A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124458U (en) * 1978-02-21 1979-08-31
JPS5712556A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Mos semiconductor device
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124458U (en) * 1978-02-21 1979-08-31
JPS5712556A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Mos semiconductor device
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device

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