JPS52149481A - Semiconductor integrated circuit device and its production - Google Patents

Semiconductor integrated circuit device and its production

Info

Publication number
JPS52149481A
JPS52149481A JP6670976A JP6670976A JPS52149481A JP S52149481 A JPS52149481 A JP S52149481A JP 6670976 A JP6670976 A JP 6670976A JP 6670976 A JP6670976 A JP 6670976A JP S52149481 A JPS52149481 A JP S52149481A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
self
alignment type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6670976A
Other languages
Japanese (ja)
Inventor
Yasoji Suzuki
Takeshi Ichiyanagi
Tadashi Kuroda
Toru Yamaguchi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6670976A priority Critical patent/JPS52149481A/en
Publication of JPS52149481A publication Critical patent/JPS52149481A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To improve surge-resistance voltage without decreasing the scale of integration by providing a protection circuit in order to prevent the breakdown of gate insulation, and connecting an IC composed of self-alignment type IGFETs to external terminals through non-self-alignment type IGFETs.
JP6670976A 1976-06-08 1976-06-08 Semiconductor integrated circuit device and its production Pending JPS52149481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6670976A JPS52149481A (en) 1976-06-08 1976-06-08 Semiconductor integrated circuit device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6670976A JPS52149481A (en) 1976-06-08 1976-06-08 Semiconductor integrated circuit device and its production

Publications (1)

Publication Number Publication Date
JPS52149481A true JPS52149481A (en) 1977-12-12

Family

ID=13323715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6670976A Pending JPS52149481A (en) 1976-06-08 1976-06-08 Semiconductor integrated circuit device and its production

Country Status (1)

Country Link
JP (1) JPS52149481A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
JPS60182760A (en) * 1984-02-29 1985-09-18 Fujitsu Ltd Semiconductor device
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit
US5256915A (en) * 1991-01-08 1993-10-26 Fujitsu Limited Compound semiconductor integrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
JPH0510829B2 (en) * 1983-10-11 1993-02-10 Nippon Electric Co
JPS60182760A (en) * 1984-02-29 1985-09-18 Fujitsu Ltd Semiconductor device
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit
JPH0519312B2 (en) * 1984-03-31 1993-03-16 Shingijutsu Jigyodan
US5256915A (en) * 1991-01-08 1993-10-26 Fujitsu Limited Compound semiconductor integrated circuit

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