JPS52149481A - Semiconductor integrated circuit device and its production - Google Patents
Semiconductor integrated circuit device and its productionInfo
- Publication number
- JPS52149481A JPS52149481A JP6670976A JP6670976A JPS52149481A JP S52149481 A JPS52149481 A JP S52149481A JP 6670976 A JP6670976 A JP 6670976A JP 6670976 A JP6670976 A JP 6670976A JP S52149481 A JPS52149481 A JP S52149481A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuit
- semiconductor integrated
- circuit device
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Abstract
PURPOSE:To improve surge-resistance voltage without decreasing the scale of integration by providing a protection circuit in order to prevent the breakdown of gate insulation, and connecting an IC composed of self-alignment type IGFETs to external terminals through non-self-alignment type IGFETs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6670976A JPS52149481A (en) | 1976-06-08 | 1976-06-08 | Semiconductor integrated circuit device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6670976A JPS52149481A (en) | 1976-06-08 | 1976-06-08 | Semiconductor integrated circuit device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52149481A true JPS52149481A (en) | 1977-12-12 |
Family
ID=13323715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6670976A Pending JPS52149481A (en) | 1976-06-08 | 1976-06-08 | Semiconductor integrated circuit device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52149481A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081868A (en) * | 1983-10-11 | 1985-05-09 | Nec Corp | Semiconductor device |
JPS60182760A (en) * | 1984-02-29 | 1985-09-18 | Fujitsu Ltd | Semiconductor device |
JPS60207368A (en) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | Manufacture of complementary type mos integrated circuit |
US5256915A (en) * | 1991-01-08 | 1993-10-26 | Fujitsu Limited | Compound semiconductor integrated circuit |
-
1976
- 1976-06-08 JP JP6670976A patent/JPS52149481A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081868A (en) * | 1983-10-11 | 1985-05-09 | Nec Corp | Semiconductor device |
JPH0510829B2 (en) * | 1983-10-11 | 1993-02-10 | Nippon Electric Co | |
JPS60182760A (en) * | 1984-02-29 | 1985-09-18 | Fujitsu Ltd | Semiconductor device |
JPS60207368A (en) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | Manufacture of complementary type mos integrated circuit |
JPH0519312B2 (en) * | 1984-03-31 | 1993-03-16 | Shingijutsu Jigyodan | |
US5256915A (en) * | 1991-01-08 | 1993-10-26 | Fujitsu Limited | Compound semiconductor integrated circuit |
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