JPS5372583A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5372583A
JPS5372583A JP14783576A JP14783576A JPS5372583A JP S5372583 A JPS5372583 A JP S5372583A JP 14783576 A JP14783576 A JP 14783576A JP 14783576 A JP14783576 A JP 14783576A JP S5372583 A JPS5372583 A JP S5372583A
Authority
JP
Japan
Prior art keywords
property
semiconductor device
antithermal
regions
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14783576A
Other languages
Japanese (ja)
Inventor
Matsuzo Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14783576A priority Critical patent/JPS5372583A/en
Publication of JPS5372583A publication Critical patent/JPS5372583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the electrical property, heat radiation property and the antithermal breakage property, by forming the regions so that they may come alternately into each other when the paired power transistors are provided on one chip.
JP14783576A 1976-12-10 1976-12-10 Semiconductor device Pending JPS5372583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14783576A JPS5372583A (en) 1976-12-10 1976-12-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14783576A JPS5372583A (en) 1976-12-10 1976-12-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372583A true JPS5372583A (en) 1978-06-28

Family

ID=15439313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14783576A Pending JPS5372583A (en) 1976-12-10 1976-12-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173582A (en) * 2005-12-22 2007-07-05 Toshiba Matsushita Display Technology Co Ltd Thin-film transistor circuit
JP2014128097A (en) * 2012-12-26 2014-07-07 Renesas Electronics Corp Semiconductor integrated circuit and operation method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173582A (en) * 2005-12-22 2007-07-05 Toshiba Matsushita Display Technology Co Ltd Thin-film transistor circuit
JP2014128097A (en) * 2012-12-26 2014-07-07 Renesas Electronics Corp Semiconductor integrated circuit and operation method of the same

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