JPS5369589A - Insulating gate type field effect transistor with protective device - Google Patents

Insulating gate type field effect transistor with protective device

Info

Publication number
JPS5369589A
JPS5369589A JP14600776A JP14600776A JPS5369589A JP S5369589 A JPS5369589 A JP S5369589A JP 14600776 A JP14600776 A JP 14600776A JP 14600776 A JP14600776 A JP 14600776A JP S5369589 A JPS5369589 A JP S5369589A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
protective device
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14600776A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14600776A priority Critical patent/JPS5369589A/en
Publication of JPS5369589A publication Critical patent/JPS5369589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make the MIS FET conductive and to protect this from destruction, by removing the parastic capacitance constituting the gate input capacitance or by making almost equal the gate input capacitance with the gate to drain electrode capacitance, and by increasing the divided voltage to the overvoltage developed at the capacitance between the gate and source electrode.
JP14600776A 1976-12-03 1976-12-03 Insulating gate type field effect transistor with protective device Pending JPS5369589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14600776A JPS5369589A (en) 1976-12-03 1976-12-03 Insulating gate type field effect transistor with protective device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14600776A JPS5369589A (en) 1976-12-03 1976-12-03 Insulating gate type field effect transistor with protective device

Publications (1)

Publication Number Publication Date
JPS5369589A true JPS5369589A (en) 1978-06-21

Family

ID=15397977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14600776A Pending JPS5369589A (en) 1976-12-03 1976-12-03 Insulating gate type field effect transistor with protective device

Country Status (1)

Country Link
JP (1) JPS5369589A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS5788774A (en) * 1980-11-25 1982-06-02 Hitachi Ltd Semiconductor device
JPS59112708A (en) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp Input protecting circuit
EP0324185A2 (en) * 1988-01-11 1989-07-19 Kabushiki Kaisha Toshiba Input protecting circuit in use with a MOS semiconductor device
EP0664564A1 (en) * 1994-01-25 1995-07-26 STMicroelectronics S.A. Integrated circuit including a protection against electrostatic discharges

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS5788774A (en) * 1980-11-25 1982-06-02 Hitachi Ltd Semiconductor device
JPH0478022B2 (en) * 1980-11-25 1992-12-10 Hitachi Ltd
JPS59112708A (en) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp Input protecting circuit
EP0324185A2 (en) * 1988-01-11 1989-07-19 Kabushiki Kaisha Toshiba Input protecting circuit in use with a MOS semiconductor device
EP0664564A1 (en) * 1994-01-25 1995-07-26 STMicroelectronics S.A. Integrated circuit including a protection against electrostatic discharges
FR2715504A1 (en) * 1994-01-25 1995-07-28 Sgs Thomson Microelectronics Integrated circuit incorporating protection against electrostatic discharge.

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