JPS5289477A - Input protecting circuit - Google Patents

Input protecting circuit

Info

Publication number
JPS5289477A
JPS5289477A JP542876A JP542876A JPS5289477A JP S5289477 A JPS5289477 A JP S5289477A JP 542876 A JP542876 A JP 542876A JP 542876 A JP542876 A JP 542876A JP S5289477 A JPS5289477 A JP S5289477A
Authority
JP
Japan
Prior art keywords
protecting circuit
input
input protecting
input voltage
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP542876A
Other languages
Japanese (ja)
Inventor
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP542876A priority Critical patent/JPS5289477A/en
Publication of JPS5289477A publication Critical patent/JPS5289477A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect gate of MIS semiconductor element by constituting input protecting circuit which has high impedance with input voltage within specified ratings and whose impedance changes to low rapidly when it exceeds over input voltage in order to prevent input damage due to static electricity.
JP542876A 1976-01-22 1976-01-22 Input protecting circuit Pending JPS5289477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP542876A JPS5289477A (en) 1976-01-22 1976-01-22 Input protecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP542876A JPS5289477A (en) 1976-01-22 1976-01-22 Input protecting circuit

Publications (1)

Publication Number Publication Date
JPS5289477A true JPS5289477A (en) 1977-07-27

Family

ID=11610895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP542876A Pending JPS5289477A (en) 1976-01-22 1976-01-22 Input protecting circuit

Country Status (1)

Country Link
JP (1) JPS5289477A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042305A2 (en) * 1980-06-18 1981-12-23 Kabushiki Kaisha Toshiba MOS transistor circuit with breakdown protection
JPS59126663A (en) * 1983-01-11 1984-07-21 Seiko Epson Corp Semiconductor device
JPS6086587A (en) * 1983-10-18 1985-05-16 セイコーインスツルメンツ株式会社 Liquid crystal display unit
JPS63220289A (en) * 1987-03-10 1988-09-13 日本電気株式会社 Thin film transistor array
JP2013535811A (en) * 2010-06-30 2013-09-12 ザイリンクス インコーポレイテッド Electrostatic discharge protection for multi-chip module dies

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042305A2 (en) * 1980-06-18 1981-12-23 Kabushiki Kaisha Toshiba MOS transistor circuit with breakdown protection
JPS59126663A (en) * 1983-01-11 1984-07-21 Seiko Epson Corp Semiconductor device
JPH0549966B2 (en) * 1983-01-11 1993-07-27 Seiko Epson Corp
JPS6086587A (en) * 1983-10-18 1985-05-16 セイコーインスツルメンツ株式会社 Liquid crystal display unit
JPS63220289A (en) * 1987-03-10 1988-09-13 日本電気株式会社 Thin film transistor array
JPH0567953B2 (en) * 1987-03-10 1993-09-27 Nippon Electric Co
JP2013535811A (en) * 2010-06-30 2013-09-12 ザイリンクス インコーポレイテッド Electrostatic discharge protection for multi-chip module dies

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