JPS562737A - Protecting circuit of insulated gate field effect transistor - Google Patents
Protecting circuit of insulated gate field effect transistorInfo
- Publication number
- JPS562737A JPS562737A JP7946279A JP7946279A JPS562737A JP S562737 A JPS562737 A JP S562737A JP 7946279 A JP7946279 A JP 7946279A JP 7946279 A JP7946279 A JP 7946279A JP S562737 A JPS562737 A JP S562737A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- gate field
- protecting circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000007599 discharging Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To protect surely an objective IGFET, by providing an IGFET, which has an on-state voltage lower than reverse dielectric strength of the first as well as the second diodes connected between the power source terminal and the earth, to form an electric discharging path. CONSTITUTION:IGFET24, 26 are provided which have on-state voltages lower than reverse dielectric strength of diodes D1 and D2 connected between power source terminal 12 and earth 14, thereby forming an electric discharging path. As a result, objective IGFET16, 20 can be protected surely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7946279A JPS562737A (en) | 1979-06-20 | 1979-06-20 | Protecting circuit of insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7946279A JPS562737A (en) | 1979-06-20 | 1979-06-20 | Protecting circuit of insulated gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS562737A true JPS562737A (en) | 1981-01-13 |
Family
ID=13690542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7946279A Pending JPS562737A (en) | 1979-06-20 | 1979-06-20 | Protecting circuit of insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS562737A (en) |
-
1979
- 1979-06-20 JP JP7946279A patent/JPS562737A/en active Pending
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