JPS54101681A - Insulating gate field effect semiconductor device with input protection unit - Google Patents

Insulating gate field effect semiconductor device with input protection unit

Info

Publication number
JPS54101681A
JPS54101681A JP854178A JP854178A JPS54101681A JP S54101681 A JPS54101681 A JP S54101681A JP 854178 A JP854178 A JP 854178A JP 854178 A JP854178 A JP 854178A JP S54101681 A JPS54101681 A JP S54101681A
Authority
JP
Japan
Prior art keywords
semiconductor device
transistor
input
insulating gate
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP854178A
Other languages
Japanese (ja)
Other versions
JPS6359263B2 (en
Inventor
Yutaka Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP854178A priority Critical patent/JPS54101681A/en
Publication of JPS54101681A publication Critical patent/JPS54101681A/en
Publication of JPS6359263B2 publication Critical patent/JPS6359263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect the gate insulating film of an input transistor from an excessive voltage by providing an insulating gate FET for protection between the input terminal and the gate electrode of the input transistor. CONSTITUTION:Within semiconductor substrate 13 from external leading-out electrode 1 for input to gate electrode 16' of input transistor 5, insulating gate FET 6 for protection where a part of other conductive-type wiring layer 14' is the drain region and the source region is connected to a ground terminal is formed. Then, the gate electrode of transistor 6 is connected to circuit 7 which holds a voltage to make always transistor 6 non-conductive by the power source voltage supplied at a semiconductor device operation time.
JP854178A 1978-01-27 1978-01-27 Insulating gate field effect semiconductor device with input protection unit Granted JPS54101681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP854178A JPS54101681A (en) 1978-01-27 1978-01-27 Insulating gate field effect semiconductor device with input protection unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP854178A JPS54101681A (en) 1978-01-27 1978-01-27 Insulating gate field effect semiconductor device with input protection unit

Publications (2)

Publication Number Publication Date
JPS54101681A true JPS54101681A (en) 1979-08-10
JPS6359263B2 JPS6359263B2 (en) 1988-11-18

Family

ID=11696003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP854178A Granted JPS54101681A (en) 1978-01-27 1978-01-27 Insulating gate field effect semiconductor device with input protection unit

Country Status (1)

Country Link
JP (1) JPS54101681A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106417A2 (en) * 1982-10-20 1984-04-25 Koninklijke Philips Electronics N.V. Integrated circuit comprising an input protection device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109682A (en) * 1974-02-04 1975-08-28
JPS52123182A (en) * 1976-04-09 1977-10-17 Fujitsu Ltd Input and output end protection system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109682A (en) * 1974-02-04 1975-08-28
JPS52123182A (en) * 1976-04-09 1977-10-17 Fujitsu Ltd Input and output end protection system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106417A2 (en) * 1982-10-20 1984-04-25 Koninklijke Philips Electronics N.V. Integrated circuit comprising an input protection device

Also Published As

Publication number Publication date
JPS6359263B2 (en) 1988-11-18

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