JPS556856A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS556856A JPS556856A JP7901278A JP7901278A JPS556856A JP S556856 A JPS556856 A JP S556856A JP 7901278 A JP7901278 A JP 7901278A JP 7901278 A JP7901278 A JP 7901278A JP S556856 A JPS556856 A JP S556856A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- mos
- potential
- input
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prefectly prevent the swing of the electric potential of input signals to value not more than earth potential while positively protecting a gate insulating film of an input element, by forming this circuit so that adequate bias be added to a gate of a MOS.FET. CONSTITUTION:When the electric potential of input signals applied to an input terminal swings in the positive direction in value not less than the yield voltage of a MOS.FET 11, a MOS.FET 12 is conducted by yield between a source and drain of the MOS.FET 12, and the excessive rise of the gate potential of the MOS.FET 11 is prevented, thus protecting the MOS.FET 11. When input potential shakes to potential not more than earth potential due to power source noises, etc., the source and drain of the MOS.FET 12 are reversed, and the MOS.FET 12 is conducted, thus preventing the drop of the potential of an input signal passage to value not more than earth potential.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7901278A JPS556856A (en) | 1978-06-28 | 1978-06-28 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7901278A JPS556856A (en) | 1978-06-28 | 1978-06-28 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS556856A true JPS556856A (en) | 1980-01-18 |
JPS627712B2 JPS627712B2 (en) | 1987-02-18 |
Family
ID=13678025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7901278A Granted JPS556856A (en) | 1978-06-28 | 1978-06-28 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556856A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0197830A (en) * | 1987-07-08 | 1989-04-17 | Midwesco Inc | Leak detector/positioning apparatus using art of reflective measurement and sampling time domain |
JP2011135049A (en) * | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | Non-linear element, display device including non-linear element, and electronic apparatus including display device |
US9385114B2 (en) | 2009-10-30 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50109682A (en) * | 1974-02-04 | 1975-08-28 |
-
1978
- 1978-06-28 JP JP7901278A patent/JPS556856A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50109682A (en) * | 1974-02-04 | 1975-08-28 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0197830A (en) * | 1987-07-08 | 1989-04-17 | Midwesco Inc | Leak detector/positioning apparatus using art of reflective measurement and sampling time domain |
US9385114B2 (en) | 2009-10-30 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
JP2011135049A (en) * | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | Non-linear element, display device including non-linear element, and electronic apparatus including display device |
Also Published As
Publication number | Publication date |
---|---|
JPS627712B2 (en) | 1987-02-18 |
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