JPS56150865A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS56150865A
JPS56150865A JP5413280A JP5413280A JPS56150865A JP S56150865 A JPS56150865 A JP S56150865A JP 5413280 A JP5413280 A JP 5413280A JP 5413280 A JP5413280 A JP 5413280A JP S56150865 A JPS56150865 A JP S56150865A
Authority
JP
Japan
Prior art keywords
fet
semiconductor device
junction
electrode
failure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5413280A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5413280A priority Critical patent/JPS56150865A/en
Publication of JPS56150865A publication Critical patent/JPS56150865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To prevent the deterioration and the failure of a semiconductor device formed by the miniaturization of an FET by providing a protective element which does not generate a strong electric field in a junction region so that the p-n junction of the FET connected to an external terminal for a signal output may not break with an abnormal voltage. CONSTITUTION:In a device for producing, for example, the output of a logic circuit L from an output buffer circuit OB to an external terminal, a protective element PD1 is connected to an FET Q6 for driving the circuit OB. This element PD1 is composed, for example, of the drain region 81 of the FET Q6 and a diffused layer 82 formed in the vicinity of the region 81, and operated at a punch through element. This layer 82 is connected to the gate 51 of the FET Q6 to inhibit a strong electric field to be produced at a junction J2 part even if a high voltage is applied from the external terminal to an electrode 99. The element PD1 may be conducted with the high voltage applied to the electrode 99 by disposing the regions 81 and 82 through a thick oxidized film 2' and extending the electrode 99 on the film 2' as an FET. Thus, the deterioration and the failure of a semiconductor device formed by the miniaturization of the FET due to the junction failure can be prevented.
JP5413280A 1980-04-25 1980-04-25 Insulated gate type field effect semiconductor device Pending JPS56150865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5413280A JPS56150865A (en) 1980-04-25 1980-04-25 Insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5413280A JPS56150865A (en) 1980-04-25 1980-04-25 Insulated gate type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS56150865A true JPS56150865A (en) 1981-11-21

Family

ID=12962050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5413280A Pending JPS56150865A (en) 1980-04-25 1980-04-25 Insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56150865A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142556A (en) * 1983-12-28 1985-07-27 Toshiba Corp Input protective circuit
US4688065A (en) * 1982-11-11 1987-08-18 Tokyo Shibaura Denki Kabushiki Kaisha MOS type semiconductor device
US5304963A (en) * 1991-10-04 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Filter circuit for an electromagnetic pickup
JPH0846198A (en) * 1995-06-26 1996-02-16 Seiko Epson Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688065A (en) * 1982-11-11 1987-08-18 Tokyo Shibaura Denki Kabushiki Kaisha MOS type semiconductor device
JPS60142556A (en) * 1983-12-28 1985-07-27 Toshiba Corp Input protective circuit
US5304963A (en) * 1991-10-04 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Filter circuit for an electromagnetic pickup
JPH0846198A (en) * 1995-06-26 1996-02-16 Seiko Epson Corp Semiconductor device

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