JPS5671975A - Mos type semiconductor system - Google Patents

Mos type semiconductor system

Info

Publication number
JPS5671975A
JPS5671975A JP14937179A JP14937179A JPS5671975A JP S5671975 A JPS5671975 A JP S5671975A JP 14937179 A JP14937179 A JP 14937179A JP 14937179 A JP14937179 A JP 14937179A JP S5671975 A JPS5671975 A JP S5671975A
Authority
JP
Japan
Prior art keywords
surge
effective channel
channel length
2mum
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14937179A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14937179A priority Critical patent/JPS5671975A/en
Publication of JPS5671975A publication Critical patent/JPS5671975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To improve an input surge pressure tightness of a system by a method wherein an effective channel length of a MOSFET connectd to an external terminal of an IC is made longer than the internal FET. CONSTITUTION:A surge is not applied to a driving FET17 and a drain layer of a logical circuit 40 which are not connected to external terminals, as a result, even if an effective channel length is a short channel having a 2mum or less channels length, a threshold value voltage does not fluctuates. Thus, a higher density is sought. Whereas, an effective channel length of FETs 14, 15 for the load use or the output use which are connected to external terminals and may be applied with a surge, is made to be an effective channel length of 2mum or more and the influence of an input surge is prevented. With this constitution, a MOSIC of high density having a sufficient pressure tightness against a surge voltage is obtained, thus reliability being high.
JP14937179A 1979-11-16 1979-11-16 Mos type semiconductor system Pending JPS5671975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14937179A JPS5671975A (en) 1979-11-16 1979-11-16 Mos type semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14937179A JPS5671975A (en) 1979-11-16 1979-11-16 Mos type semiconductor system

Publications (1)

Publication Number Publication Date
JPS5671975A true JPS5671975A (en) 1981-06-15

Family

ID=15473668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14937179A Pending JPS5671975A (en) 1979-11-16 1979-11-16 Mos type semiconductor system

Country Status (1)

Country Link
JP (1) JPS5671975A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626712A (en) * 1983-03-18 1986-12-02 Nec Corporation High speed MOS input circuit with precision input-output characteristics
US5239194A (en) * 1990-03-02 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having increased electrostatic breakdown voltage

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106590A (en) * 1974-01-29 1975-08-22
JPS5111383A (en) * 1974-07-18 1976-01-29 Mitsubishi Electric Corp
JPS5131185A (en) * 1974-09-10 1976-03-17 Nippon Electric Co DENKAIKOKAHANDOTAISOCHI
JPS5384488A (en) * 1976-12-29 1978-07-25 Matsushita Electric Ind Co Ltd Electric charge transfer device
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS5448179A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Mis-type semiconductor integrated circuit device
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106590A (en) * 1974-01-29 1975-08-22
JPS5111383A (en) * 1974-07-18 1976-01-29 Mitsubishi Electric Corp
JPS5131185A (en) * 1974-09-10 1976-03-17 Nippon Electric Co DENKAIKOKAHANDOTAISOCHI
JPS5384488A (en) * 1976-12-29 1978-07-25 Matsushita Electric Ind Co Ltd Electric charge transfer device
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS5448179A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Mis-type semiconductor integrated circuit device
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626712A (en) * 1983-03-18 1986-12-02 Nec Corporation High speed MOS input circuit with precision input-output characteristics
US5239194A (en) * 1990-03-02 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having increased electrostatic breakdown voltage

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