JPS55165682A - Mos field effect semiconductor device - Google Patents
Mos field effect semiconductor deviceInfo
- Publication number
- JPS55165682A JPS55165682A JP7415779A JP7415779A JPS55165682A JP S55165682 A JPS55165682 A JP S55165682A JP 7415779 A JP7415779 A JP 7415779A JP 7415779 A JP7415779 A JP 7415779A JP S55165682 A JPS55165682 A JP S55165682A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- resistance
- high voltage
- terminal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To protect an FET surely even when a momentary DC high voltage is developed by providing a resistance, MOSFET and bipolar transistor between the input and earth terminals of the MOSFET that is to be prevented from breakdown. CONSTITUTION:The P-N-P bipolar transistor 8 is provided between the input terminal T and earth terminal E of the first MOSFET2, which is to be prevented from breakdown, in parallel. Similarly a series circuit that consists of the resistance 9 and the second MOSFET10 is connected to said elements in parallel, and the base of the transistor 8 is connected to the gate of the transistor 10 through the connection point of both the resistance 9 and the element 10. In this way, even when high voltage is applied to the terminal T, current flows through the transistor 8, and the high voltage is not applied to the gate of the element 2. At this time, the transistor 8 conducts according to a time constant of both the capacitance 10a of the element 10 and the resistance 9, and the applied high voltage is discharged to the terminal E.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7415779A JPS55165682A (en) | 1979-06-11 | 1979-06-11 | Mos field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7415779A JPS55165682A (en) | 1979-06-11 | 1979-06-11 | Mos field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55165682A true JPS55165682A (en) | 1980-12-24 |
Family
ID=13539032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7415779A Pending JPS55165682A (en) | 1979-06-11 | 1979-06-11 | Mos field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55165682A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143860A (en) * | 1981-01-26 | 1982-09-06 | Philips Nv | Semiconductor device |
US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
US5041889A (en) * | 1989-03-16 | 1991-08-20 | Siemens Aktiengesellschaft | Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors |
EP0625289A1 (en) * | 1992-02-04 | 1994-11-23 | Cirrus Logic, Inc. | Shunt circuit for electrostatic discharge protection |
US5539233A (en) * | 1993-07-22 | 1996-07-23 | Texas Instruments Incorporated | Controlled low collector breakdown voltage vertical transistor for ESD protection circuits |
US6078083A (en) * | 1994-05-16 | 2000-06-20 | Texas Instruments Incorporated | ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides |
-
1979
- 1979-06-11 JP JP7415779A patent/JPS55165682A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143860A (en) * | 1981-01-26 | 1982-09-06 | Philips Nv | Semiconductor device |
JPH0230584B2 (en) * | 1981-01-26 | 1990-07-06 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
US5041889A (en) * | 1989-03-16 | 1991-08-20 | Siemens Aktiengesellschaft | Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors |
EP0625289A1 (en) * | 1992-02-04 | 1994-11-23 | Cirrus Logic, Inc. | Shunt circuit for electrostatic discharge protection |
EP0625289A4 (en) * | 1992-02-04 | 1995-01-18 | Cirrus Logic Inc | Shunt circuit for electrostatic discharge protection. |
US5539233A (en) * | 1993-07-22 | 1996-07-23 | Texas Instruments Incorporated | Controlled low collector breakdown voltage vertical transistor for ESD protection circuits |
US6078083A (en) * | 1994-05-16 | 2000-06-20 | Texas Instruments Incorporated | ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides |
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