JPS5640279A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5640279A
JPS5640279A JP11654779A JP11654779A JPS5640279A JP S5640279 A JPS5640279 A JP S5640279A JP 11654779 A JP11654779 A JP 11654779A JP 11654779 A JP11654779 A JP 11654779A JP S5640279 A JPS5640279 A JP S5640279A
Authority
JP
Japan
Prior art keywords
terminal
gate
transistor
capacitor
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11654779A
Other languages
Japanese (ja)
Inventor
Takeo Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11654779A priority Critical patent/JPS5640279A/en
Publication of JPS5640279A publication Critical patent/JPS5640279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To completely protect the gate of a MISFET from the application of an instantaneous high-voltage of the static electricity accumulated in a human body by connecting a circuit comprising a bipolar transistor and a capacitor to the gate of the MISFET. CONSTITUTION:The gate of a MISFET element 2 such as an insulated gate FET is connected to an input terminal T, and the source or drain and the substrate to an earth terminal E to be at a reference potential. The output is drawn from the drain or source. In the constitution, a pnp type transistor 8 is used to protect the gate of the element 2 from the application of an unprepared instantaneous high voltage, with the collector and emitter of the transistor 8 connected to the terminal T and the terminal E respectively. Moreover, a capacitor 9 is placed between the base of the transistor 8 and the terminal T. Thus, when an undesired high voltage is applied to the terminal T, a transient current flows through the capacitor 9 to actuate the transistor 8 to discharge the high voltage of the terminal E.
JP11654779A 1979-09-10 1979-09-10 Semiconductor integrated circuit Pending JPS5640279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11654779A JPS5640279A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11654779A JPS5640279A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5640279A true JPS5640279A (en) 1981-04-16

Family

ID=14689809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11654779A Pending JPS5640279A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5640279A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170322A (en) * 1984-01-23 1985-09-03 インターナショナル・レクチフアイヤー・コーポレーション Solid element relay circuit
US5041889A (en) * 1989-03-16 1991-08-20 Siemens Aktiengesellschaft Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors
US6512663B1 (en) 1999-05-24 2003-01-28 Nec Corporation Electrostatic protection device and electrostatic protection circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170322A (en) * 1984-01-23 1985-09-03 インターナショナル・レクチフアイヤー・コーポレーション Solid element relay circuit
US5041889A (en) * 1989-03-16 1991-08-20 Siemens Aktiengesellschaft Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors
US6512663B1 (en) 1999-05-24 2003-01-28 Nec Corporation Electrostatic protection device and electrostatic protection circuit

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