JPS5619656A - Semiconductor ic - Google Patents

Semiconductor ic

Info

Publication number
JPS5619656A
JPS5619656A JP9587679A JP9587679A JPS5619656A JP S5619656 A JPS5619656 A JP S5619656A JP 9587679 A JP9587679 A JP 9587679A JP 9587679 A JP9587679 A JP 9587679A JP S5619656 A JPS5619656 A JP S5619656A
Authority
JP
Japan
Prior art keywords
transistor
input terminal
earth terminal
gate
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9587679A
Other languages
Japanese (ja)
Inventor
Takeo Komatsu
Toshihiko Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9587679A priority Critical patent/JPS5619656A/en
Publication of JPS5619656A publication Critical patent/JPS5619656A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect an FET gate from an instantaneous high voltage caused by a static electricity charged on a human body by a method wherein an NPN-type transistor and an MOS transistor are provided between an input terminal of MISFET, with which an IC is constituted, and an earth terminal. CONSTITUTION:The input terminal T is connected to a gate of the MISFET element 2 to be protected and the earth terminal E is connected to a source or a drain of the element 2 and the element 2 substrate. Then, in order to protect the element 2 from an instantaneous high voltage, a transistor emitter is connected to an input terminal and a collector is connected to the earth terminal E using an NPN-type transistor 8 and an MOS transistor 9. In addition, the source and drain of the MOS transistor 9 are connected between the base of the transistor 8 and the earth terminal E and the transistor 9 substrate is grounded. As a result, when an overvoltage is applied to the input terminal, the transistor 8 bypasses it instantly and no damage is given to the element 2 gate.
JP9587679A 1979-07-26 1979-07-26 Semiconductor ic Pending JPS5619656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9587679A JPS5619656A (en) 1979-07-26 1979-07-26 Semiconductor ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9587679A JPS5619656A (en) 1979-07-26 1979-07-26 Semiconductor ic

Publications (1)

Publication Number Publication Date
JPS5619656A true JPS5619656A (en) 1981-02-24

Family

ID=14149536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9587679A Pending JPS5619656A (en) 1979-07-26 1979-07-26 Semiconductor ic

Country Status (1)

Country Link
JP (1) JPS5619656A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656850A (en) * 1983-12-19 1987-04-14 Miwa Lock Mfg. Co., Ltd. Electric lock
US5291051A (en) * 1992-09-11 1994-03-01 National Semiconductor Corporation ESD protection for inputs requiring operation beyond supply voltages
US5621818A (en) * 1991-07-10 1997-04-15 Fuji Xerox Co., Ltd. Document recognition apparatus
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
KR100296147B1 (en) * 1992-06-29 2001-10-22 이데이 노부유끼 Semiconductor device and horizontal register of solid-state image sensing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656850A (en) * 1983-12-19 1987-04-14 Miwa Lock Mfg. Co., Ltd. Electric lock
US5621818A (en) * 1991-07-10 1997-04-15 Fuji Xerox Co., Ltd. Document recognition apparatus
KR100296147B1 (en) * 1992-06-29 2001-10-22 이데이 노부유끼 Semiconductor device and horizontal register of solid-state image sensing device
US5291051A (en) * 1992-09-11 1994-03-01 National Semiconductor Corporation ESD protection for inputs requiring operation beyond supply voltages
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides

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