JPS5640272A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5640272A
JPS5640272A JP11654979A JP11654979A JPS5640272A JP S5640272 A JPS5640272 A JP S5640272A JP 11654979 A JP11654979 A JP 11654979A JP 11654979 A JP11654979 A JP 11654979A JP S5640272 A JPS5640272 A JP S5640272A
Authority
JP
Japan
Prior art keywords
terminal
drain
gate
source
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11654979A
Other languages
Japanese (ja)
Other versions
JPS6127916B2 (en
Inventor
Takeo Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11654979A priority Critical patent/JPS5640272A/en
Publication of JPS5640272A publication Critical patent/JPS5640272A/en
Publication of JPS6127916B2 publication Critical patent/JPS6127916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To securely protect the gate of an IGFET from an unprepared application of an instantaneous high-voltage of the static electricity accumulated in a human body by connecting a circuit comprising a bipolar transistor and a MISFET to the gate of the IGFET. CONSTITUTION:The gate of an IGFET 2 to be protected is connected to an input terminal T, and the source or drain and the substrate to an earth terminal E to be at a reference potential. The output signal is drawn from the drain or source. Added to the constitution are pnp type bipolar transistor 8 whose collector is connected to the terminal T, and emitter to the terminal E; and a MISFET 9 which is provided between the base of the transistor 8 and the terminal T. In other words, the source or drain and the substrate of the FET 2 are connected to the base of the transistor 8, and the gate and the drain or source to the terminal T. In addition, placing a resistor 20 between the base and emitter of the transistor 8 permits a more stable operation.
JP11654979A 1979-09-10 1979-09-10 Semiconductor integrated circuit Granted JPS5640272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11654979A JPS5640272A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11654979A JPS5640272A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5640272A true JPS5640272A (en) 1981-04-16
JPS6127916B2 JPS6127916B2 (en) 1986-06-27

Family

ID=14689858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11654979A Granted JPS5640272A (en) 1979-09-10 1979-09-10 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5640272A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986332A (en) * 1982-11-09 1984-05-18 Nec Corp Semiconductor integrated circuit
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
JPS63190375A (en) * 1986-09-30 1988-08-05 テキサス　インスツルメンツ　インコーポレイテツド Method and circuit for protecting integrated circuit from static discharge
JPH0585986U (en) * 1991-06-27 1993-11-19 積水化学工業株式会社 Door structure
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US6538290B1 (en) * 1999-01-28 2003-03-25 Mitsumi Electric Co., Ltd. Static protection device
US10502492B2 (en) 2014-01-23 2019-12-10 Mitsubishi Hitachi Power Systems, Ltd. Condenser for condensing steam from a steam turbine

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986332A (en) * 1982-11-09 1984-05-18 Nec Corp Semiconductor integrated circuit
JPH035686B2 (en) * 1982-11-09 1991-01-28 Nippon Electric Co
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
JPH0530073B2 (en) * 1983-12-16 1993-05-07 Hitachi Ltd
JPS63190375A (en) * 1986-09-30 1988-08-05 テキサス　インスツルメンツ　インコーポレイテツド Method and circuit for protecting integrated circuit from static discharge
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
JPH0585986U (en) * 1991-06-27 1993-11-19 積水化学工業株式会社 Door structure
JP2564861Y2 (en) * 1991-06-27 1998-03-11 積水化学工業株式会社 Wall structure
US6538290B1 (en) * 1999-01-28 2003-03-25 Mitsumi Electric Co., Ltd. Static protection device
US10502492B2 (en) 2014-01-23 2019-12-10 Mitsubishi Hitachi Power Systems, Ltd. Condenser for condensing steam from a steam turbine

Also Published As

Publication number Publication date
JPS6127916B2 (en) 1986-06-27

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