JPS52139390A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS52139390A
JPS52139390A JP5537076A JP5537076A JPS52139390A JP S52139390 A JPS52139390 A JP S52139390A JP 5537076 A JP5537076 A JP 5537076A JP 5537076 A JP5537076 A JP 5537076A JP S52139390 A JPS52139390 A JP S52139390A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
parasitic
phenomena
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5537076A
Other languages
Japanese (ja)
Inventor
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5537076A priority Critical patent/JPS52139390A/en
Publication of JPS52139390A publication Critical patent/JPS52139390A/en
Pending legal-status Critical Current

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Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: The degradation in the characteristics of elements and abnormal false operations are prevented by absorbing the parasitic current owing to parasitic NPN transistor phenomena.
COPYRIGHT: (C)1977,JPO&Japio
JP5537076A 1976-05-17 1976-05-17 Semiconductor integrated circuit device Pending JPS52139390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5537076A JPS52139390A (en) 1976-05-17 1976-05-17 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5537076A JPS52139390A (en) 1976-05-17 1976-05-17 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS52139390A true JPS52139390A (en) 1977-11-21

Family

ID=12996588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5537076A Pending JPS52139390A (en) 1976-05-17 1976-05-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52139390A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157151A (en) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS59108326A (en) * 1982-12-14 1984-06-22 Sanyo Electric Co Ltd Integrated circuit
JPS61112642U (en) * 1984-12-26 1986-07-16
JPS61168653U (en) * 1985-04-09 1986-10-20
JPS63175440A (en) * 1986-12-22 1988-07-19 テキサス　インスツルメンツ　インコーポレイテツド Technology for coupling bipolar device and cmos device by employing electric active trench
JPH08213669A (en) * 1995-02-01 1996-08-20 Toshiba Corp Hall element and electric amount measuring equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157151A (en) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS59108326A (en) * 1982-12-14 1984-06-22 Sanyo Electric Co Ltd Integrated circuit
JPS61112642U (en) * 1984-12-26 1986-07-16
JPS61168653U (en) * 1985-04-09 1986-10-20
JPH054283Y2 (en) * 1985-04-09 1993-02-02
JPS63175440A (en) * 1986-12-22 1988-07-19 テキサス　インスツルメンツ　インコーポレイテツド Technology for coupling bipolar device and cmos device by employing electric active trench
JPH08213669A (en) * 1995-02-01 1996-08-20 Toshiba Corp Hall element and electric amount measuring equipment

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