JPS55146975A - Mos field effect type semiconductor device - Google Patents

Mos field effect type semiconductor device

Info

Publication number
JPS55146975A
JPS55146975A JP5462079A JP5462079A JPS55146975A JP S55146975 A JPS55146975 A JP S55146975A JP 5462079 A JP5462079 A JP 5462079A JP 5462079 A JP5462079 A JP 5462079A JP S55146975 A JPS55146975 A JP S55146975A
Authority
JP
Japan
Prior art keywords
terminal
mos
fet
resistance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5462079A
Other languages
Japanese (ja)
Other versions
JPS6034824B2 (en
Inventor
Teruaki Harada
Takeo Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54054620A priority Critical patent/JPS6034824B2/en
Publication of JPS55146975A publication Critical patent/JPS55146975A/en
Publication of JPS6034824B2 publication Critical patent/JPS6034824B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To protect a MOS.FET from a momentary high voltage by providing a bipolar transistor between the input and ground terminals wherein the MOS.FET is connected. CONSTITUTION:The gate of the MOS.FET 2 to be protected is connected to the input terminal T, and the source or drain and the substrate of the element 2 are connected to the ground terminal E. Next the npn transistor 8 is provided between the terminal T, E to protect the element 2, its emitter is connected to the terminal T and its collector to the terminal E, the base is connected to the terminal T through the resistance 9 and is connected to the terminal E through a series circuit that consists of the resistance 10 and the capacitor 11. When values of the resistance 9, 10, maximum value of the input voltage rating of the element 2 and voltage of turning on the element 8 are R1,R2, VIMAX and VBE respectively, the formula shown in figure can be satisfied by these values.
JP54054620A 1979-05-03 1979-05-03 MOS field effect semiconductor device Expired JPS6034824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54054620A JPS6034824B2 (en) 1979-05-03 1979-05-03 MOS field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54054620A JPS6034824B2 (en) 1979-05-03 1979-05-03 MOS field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS55146975A true JPS55146975A (en) 1980-11-15
JPS6034824B2 JPS6034824B2 (en) 1985-08-10

Family

ID=12975774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54054620A Expired JPS6034824B2 (en) 1979-05-03 1979-05-03 MOS field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6034824B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260230U (en) * 1985-10-02 1987-04-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
JPH0530073B2 (en) * 1983-12-16 1993-05-07 Hitachi Ltd

Also Published As

Publication number Publication date
JPS6034824B2 (en) 1985-08-10

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