JPS5717227A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS5717227A JPS5717227A JP9064980A JP9064980A JPS5717227A JP S5717227 A JPS5717227 A JP S5717227A JP 9064980 A JP9064980 A JP 9064980A JP 9064980 A JP9064980 A JP 9064980A JP S5717227 A JPS5717227 A JP S5717227A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- vcc
- terminal
- voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
Abstract
PURPOSE:To avoid latch-up, fluctuation in elements such as threshold voltage and mutual conductance, and defective elements, by disconnecting external power supply terminals from the power supply terminals of an integrated circuit at the excessive fluctuation of the power supply. CONSTITUTION:A reference voltage Vcc' proportional to a power supply voltage Vcc is applied to a terminal 4 of a control circuit 6 having a differential amplifier, a reference voltage VR is applied to a terminal 5 to control a gate voltage of a P channel MOS transistor 7 connected between a terminal 2 to which a power supply Vcc is applied and an entire circuit or a suitable circuit block 1 such as a terminal 2 to which the power supply voltage Vcc is applied, logical circuits, analog circuits and memory circuits. The entire region 8 is integrated on the same silicon substrate. When an excessive voltage is applied to the Vcc terminal 2 and Vcc'>VR is obtained, the MOS transistor switch 7 is nonconductive to disconnect the circuit block 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9064980A JPS5717227A (en) | 1980-07-04 | 1980-07-04 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9064980A JPS5717227A (en) | 1980-07-04 | 1980-07-04 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5717227A true JPS5717227A (en) | 1982-01-28 |
Family
ID=14004353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9064980A Pending JPS5717227A (en) | 1980-07-04 | 1980-07-04 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717227A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02215154A (en) * | 1989-02-16 | 1990-08-28 | Toshiba Corp | Voltage control circuit |
EP0848498A1 (en) * | 1996-12-10 | 1998-06-17 | Fujitsu Limited | Output driver circuit in semiconductor device |
JP4829880B2 (en) * | 2004-06-03 | 2011-12-07 | アルテラ コーポレイション | Electrostatic discharge protection circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010450A (en) * | 1973-06-06 | 1975-02-03 |
-
1980
- 1980-07-04 JP JP9064980A patent/JPS5717227A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010450A (en) * | 1973-06-06 | 1975-02-03 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02215154A (en) * | 1989-02-16 | 1990-08-28 | Toshiba Corp | Voltage control circuit |
EP0848498A1 (en) * | 1996-12-10 | 1998-06-17 | Fujitsu Limited | Output driver circuit in semiconductor device |
US5936456A (en) * | 1996-12-10 | 1999-08-10 | Fujitsu Limited | Output driver circuit in semiconductor device |
JP4829880B2 (en) * | 2004-06-03 | 2011-12-07 | アルテラ コーポレイション | Electrostatic discharge protection circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6429018A (en) | Input protection device for semiconductor circuit device | |
JPS6472618A (en) | Driver circuit | |
JPS577969A (en) | Semiconductor integrated circuit | |
EP0166581A3 (en) | Cmos circuit overvoltage protection | |
JPS56121114A (en) | Constant-current circuit | |
US6040735A (en) | Reference voltage generators including first and second transistors of same conductivity type | |
KR880009447A (en) | C-MOS Integrated Circuit Device with Latch-Up Protection Circuit | |
DE3067417D1 (en) | Circuit for electrically connecting a volatile memory to a power supply input terminal | |
KR880004579A (en) | CMOS integrated circuit device | |
US6275100B1 (en) | Reference voltage generators including first and second transistors of same conductivity type and at least one switch | |
JPS5717227A (en) | Integrated circuit device | |
EP0802604A3 (en) | Protection circuit | |
US4654543A (en) | Thyristor with "on" protective circuit and darlington output stage | |
JPS5745975A (en) | Input protecting device for semiconductor device | |
ES8603126A1 (en) | Electronic contacts and associated devices. | |
EP0090280A3 (en) | Semiconductor integrated circuit device and method of making the same | |
JPS55165682A (en) | Mos field effect semiconductor device | |
JPS57117181A (en) | Semiconductor load circuit | |
EP0126184A3 (en) | Input protection circuit and bias method for scaled cmos devices | |
JPS5638853A (en) | System for protecting input and output of semiconductor integrated circuit | |
JPS57207413A (en) | Negative resistance circuit | |
JPS55166953A (en) | Semiconductor integrated circuit device | |
JPS55105362A (en) | Semiconductor integrated circuit device | |
JPS57162466A (en) | Input-output protective circuit for integrated circuit | |
JPS556856A (en) | Semiconductor integrated circuit |