JPS5524489A - Insulated gate type semiconductor - Google Patents
Insulated gate type semiconductorInfo
- Publication number
- JPS5524489A JPS5524489A JP9796378A JP9796378A JPS5524489A JP S5524489 A JPS5524489 A JP S5524489A JP 9796378 A JP9796378 A JP 9796378A JP 9796378 A JP9796378 A JP 9796378A JP S5524489 A JPS5524489 A JP S5524489A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- range
- terminal
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: For raising mutual conductance considerably, to generate parasitic transistor effect by interconnecting a MOS type element gate electrode and a semiconductor substrate by means of the resistor having a proper resistance value.
CONSTITUTION: N+-type source range 3 and drain range 2 are diffusedly formed on a P-type semiconductor substrate 1, and a gate electrode 5 is fitted on the oxidized gate film 4 provided on the surface of said substrate 1. Next, a source terminal S, a drain terminal D and a terminal G are provided at said range 3 and range 2 and on said electrode 5, and said terminal S is earthed. Further, said electrode 5 and substrate 1 are intentionally interconnected by means of a resistor R, and part of the current of said electrode 5 is let flow into said substrate 1 for making an NPN lateral transistor with said substrate 1 used as base. Thereby, drain current increases due to the induction of current amplification. Thus, this insulated gate type semiconductor shows such a characteristic that element apparently increases in mutual conductance.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9796378A JPS5524489A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9796378A JPS5524489A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5524489A true JPS5524489A (en) | 1980-02-21 |
JPS6146988B2 JPS6146988B2 (en) | 1986-10-16 |
Family
ID=14206319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9796378A Granted JPS5524489A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524489A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543649A (en) * | 1994-03-02 | 1996-08-06 | Samsung Electronics Co., Ltd. | Electrostatic discharge protection device for a semiconductor circuit |
US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
-
1978
- 1978-08-10 JP JP9796378A patent/JPS5524489A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543649A (en) * | 1994-03-02 | 1996-08-06 | Samsung Electronics Co., Ltd. | Electrostatic discharge protection device for a semiconductor circuit |
US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
USRE38222E1 (en) * | 1996-06-28 | 2003-08-19 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
Also Published As
Publication number | Publication date |
---|---|
JPS6146988B2 (en) | 1986-10-16 |
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