JPS5524489A - Insulated gate type semiconductor - Google Patents

Insulated gate type semiconductor

Info

Publication number
JPS5524489A
JPS5524489A JP9796378A JP9796378A JPS5524489A JP S5524489 A JPS5524489 A JP S5524489A JP 9796378 A JP9796378 A JP 9796378A JP 9796378 A JP9796378 A JP 9796378A JP S5524489 A JPS5524489 A JP S5524489A
Authority
JP
Japan
Prior art keywords
substrate
electrode
range
terminal
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9796378A
Other languages
Japanese (ja)
Other versions
JPS6146988B2 (en
Inventor
Shigeru Watari
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9796378A priority Critical patent/JPS5524489A/en
Publication of JPS5524489A publication Critical patent/JPS5524489A/en
Publication of JPS6146988B2 publication Critical patent/JPS6146988B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: For raising mutual conductance considerably, to generate parasitic transistor effect by interconnecting a MOS type element gate electrode and a semiconductor substrate by means of the resistor having a proper resistance value.
CONSTITUTION: N+-type source range 3 and drain range 2 are diffusedly formed on a P-type semiconductor substrate 1, and a gate electrode 5 is fitted on the oxidized gate film 4 provided on the surface of said substrate 1. Next, a source terminal S, a drain terminal D and a terminal G are provided at said range 3 and range 2 and on said electrode 5, and said terminal S is earthed. Further, said electrode 5 and substrate 1 are intentionally interconnected by means of a resistor R, and part of the current of said electrode 5 is let flow into said substrate 1 for making an NPN lateral transistor with said substrate 1 used as base. Thereby, drain current increases due to the induction of current amplification. Thus, this insulated gate type semiconductor shows such a characteristic that element apparently increases in mutual conductance.
COPYRIGHT: (C)1980,JPO&Japio
JP9796378A 1978-08-10 1978-08-10 Insulated gate type semiconductor Granted JPS5524489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9796378A JPS5524489A (en) 1978-08-10 1978-08-10 Insulated gate type semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9796378A JPS5524489A (en) 1978-08-10 1978-08-10 Insulated gate type semiconductor

Publications (2)

Publication Number Publication Date
JPS5524489A true JPS5524489A (en) 1980-02-21
JPS6146988B2 JPS6146988B2 (en) 1986-10-16

Family

ID=14206319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9796378A Granted JPS5524489A (en) 1978-08-10 1978-08-10 Insulated gate type semiconductor

Country Status (1)

Country Link
JP (1) JPS5524489A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543649A (en) * 1994-03-02 1996-08-06 Samsung Electronics Co., Ltd. Electrostatic discharge protection device for a semiconductor circuit
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543649A (en) * 1994-03-02 1996-08-06 Samsung Electronics Co., Ltd. Electrostatic discharge protection device for a semiconductor circuit
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
USRE38222E1 (en) * 1996-06-28 2003-08-19 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling

Also Published As

Publication number Publication date
JPS6146988B2 (en) 1986-10-16

Similar Documents

Publication Publication Date Title
KR830009653A (en) Integrated circuit protection device
JPS5524489A (en) Insulated gate type semiconductor
JPH031571A (en) Semiconductor device
JPS5380944A (en) Semiconductor circuit
JPS5538030A (en) Semiconductor device
JPS5297683A (en) Semiconductor circuit device
JPS5768075A (en) Manufacture of integrated circuit device
JPS5565470A (en) Mos integrated circuit
JPS5728362A (en) Semiconductor device
JPS54149479A (en) Semiconductor device
JPS5211776A (en) Method of manufacturing semiconductor device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS5713758A (en) Semiconductor device
JPS55146975A (en) Mos field effect type semiconductor device
JPS56133863A (en) Semiconductor device
JPS5295984A (en) Vertical junction type field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS57145375A (en) Mis type semiconductor integrated circuit device
JPS53137677A (en) Junction type field effect transistor and its manufacture
JPS5263080A (en) Production of semiconductor integrated circuit device
JPS5493980A (en) Field-effect semicoductor device
SU408428A1 (en)
JPS5518072A (en) Mos semiconductor device
JPS5269585A (en) Semiconductor device
JPS57208176A (en) Semiconductor negative resistance element