JPS5728362A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5728362A
JPS5728362A JP10419780A JP10419780A JPS5728362A JP S5728362 A JPS5728362 A JP S5728362A JP 10419780 A JP10419780 A JP 10419780A JP 10419780 A JP10419780 A JP 10419780A JP S5728362 A JPS5728362 A JP S5728362A
Authority
JP
Japan
Prior art keywords
layer
region
type
diffused
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10419780A
Other languages
Japanese (ja)
Other versions
JPH0132665B2 (en
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP10419780A priority Critical patent/JPS5728362A/en
Publication of JPS5728362A publication Critical patent/JPS5728362A/en
Publication of JPH0132665B2 publication Critical patent/JPH0132665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the current limiting function of transistors, by forming a diffused resistor in a separated region neighboring to the region in which an element of an epitaxial layer is formed by a base process, and connecting an emitter region and an emitter electrode provided on a substrate. CONSTITUTION:A P<-> type epitaxial layer 111 is provided on a low-resistance P type wafer 110 to obtain a substrate 11. An N type expitaxial layer 13 is formed on the substrate 11, and an NPN transistor is provided in a separated region in which 2 buried layer 12 is formed. When a base 17 of the element is diffused, a P type layer 19 is formed on an N type epitaxial layer 15 separated by a P<+> type diffused layer 16 neighboring to the element forming region so that one end 21 of the layer 19 contacts with the diffused layer 16, and the other end of the layer 19 is connected with an emitter region 18 through a wiring 20. Also, on the rear face of the substrate 11, and emitter electrode 26 is provided. Therefore, a transistor having a high emitter resistance of the summed resistances of the diffused layer 19 and the P<-> type epitaxial layer 111 can be formed, and the DC amplification rate in a large current region can be lowered rapidly.
JP10419780A 1980-07-28 1980-07-28 Semiconductor device Granted JPS5728362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10419780A JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10419780A JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5728362A true JPS5728362A (en) 1982-02-16
JPH0132665B2 JPH0132665B2 (en) 1989-07-10

Family

ID=14374245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10419780A Granted JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728362A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125132A (en) * 1994-10-28 1996-05-17 Rohm Co Ltd Semiconductor device
JP2006295073A (en) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125132A (en) * 1994-10-28 1996-05-17 Rohm Co Ltd Semiconductor device
JP2006295073A (en) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device
US8969987B2 (en) 2006-10-23 2015-03-03 Sony Corporation Solid-state imaging device

Also Published As

Publication number Publication date
JPH0132665B2 (en) 1989-07-10

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