JPS5491077A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5491077A
JPS5491077A JP15793477A JP15793477A JPS5491077A JP S5491077 A JPS5491077 A JP S5491077A JP 15793477 A JP15793477 A JP 15793477A JP 15793477 A JP15793477 A JP 15793477A JP S5491077 A JPS5491077 A JP S5491077A
Authority
JP
Japan
Prior art keywords
npn transistor
collector current
hfe
layer
allows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15793477A
Other languages
Japanese (ja)
Inventor
Giichi Shimizu
Masayuki Kurozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15793477A priority Critical patent/JPS5491077A/en
Publication of JPS5491077A publication Critical patent/JPS5491077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To form a circuit which allows a constant collector current to flow even if (hFE) of a NPN transistor varies owing to manufacture conditions. CONSTITUTION:On the same substrate, NPN transistor 1 is formed and beltlike resistance 2a is also formed at the same time as the formation of the base layer; and both the terminals of the resistor are removed, the entire surface is covered and layer 2b is provided which is diffused at the same time as the emitter layer. If (hFE) of NPN transistor 1 varies greatly from the design center, the value of diffusion resistor 2 becomes large and the base potential of NPN transistor 1 is decreased to reduce the collector current. Deciding the value of diffusion resistance 2 so that the increment of the collector current will be equal to its decrement forms the circuit which allows the constant collector current to flow against the variation in (hFE).
JP15793477A 1977-12-28 1977-12-28 Semiconductor integrated circuit Pending JPS5491077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15793477A JPS5491077A (en) 1977-12-28 1977-12-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15793477A JPS5491077A (en) 1977-12-28 1977-12-28 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5491077A true JPS5491077A (en) 1979-07-19

Family

ID=15660665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15793477A Pending JPS5491077A (en) 1977-12-28 1977-12-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5491077A (en)

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
JPS55165674A (en) Semiconductor device
US3575742A (en) Method of making a semiconductor device
JPS5491077A (en) Semiconductor integrated circuit
JPS55153367A (en) Semiconductor device
JPS577157A (en) Semiconductor device
JPS5314579A (en) Semiconductor integrated circuit and its production
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS5728362A (en) Semiconductor device
JPS5635456A (en) Semiconductor integrated circuit
JPS5710968A (en) Semiconductor device
JPS5489593A (en) Semiconductor integrated circuit
JPS5735366A (en) Semiconductor integrated circuit device
JPS5260078A (en) Pnp type transistor for semiconductor integrated circuit
JPS57198657A (en) Semiconductor device
JPS55125678A (en) Zener diode
JPS554915A (en) Semi-conductor manufacturing method
JPS56115555A (en) Semiconductor integrated circuit device
JPS5734359A (en) Semiconductor device and manufacture thereof
JPS52141575A (en) Manufacture of semiconductor device
JPS52142977A (en) Production of semiconductor integrated circuit device
JPS56134764A (en) Manufacturing of bipolar integrated circuit
JPS55102262A (en) Semiconductor device
JPS5627964A (en) Semiconductor device
JPS51113470A (en) Semiconductor device