JPS56134764A - Manufacturing of bipolar integrated circuit - Google Patents

Manufacturing of bipolar integrated circuit

Info

Publication number
JPS56134764A
JPS56134764A JP3867180A JP3867180A JPS56134764A JP S56134764 A JPS56134764 A JP S56134764A JP 3867180 A JP3867180 A JP 3867180A JP 3867180 A JP3867180 A JP 3867180A JP S56134764 A JPS56134764 A JP S56134764A
Authority
JP
Japan
Prior art keywords
emitter
width
hfe
emitter width
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3867180A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Kazuyoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3867180A priority Critical patent/JPS56134764A/en
Publication of JPS56134764A publication Critical patent/JPS56134764A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide a constant rate of increase of current and a highly improved performance of operation of bipolar IC by a method wherein an emitter width of another transistor is uniformly made to a minimum emitter width to be formed. CONSTITUTION:When an emitter of a bipolar transistor is to be performed, hFE is decreased in response to an emitter width less than a certain value. A value of width in which a decreased emitter width is made is not limited in general in response to the kind of emitter dispersion source, and 4mum or less is found at a dispersion of As. Thus, when IC containing a plurality of bipolar transistors having emitter width in which hFE is varied, an emitter width of another transistor is unified to a minimum emitter width, hFE of each of the component elements is made to be constant, an allowable range of hFE of IC is reduced and a performance of operation is excessively improved.
JP3867180A 1980-03-26 1980-03-26 Manufacturing of bipolar integrated circuit Pending JPS56134764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3867180A JPS56134764A (en) 1980-03-26 1980-03-26 Manufacturing of bipolar integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3867180A JPS56134764A (en) 1980-03-26 1980-03-26 Manufacturing of bipolar integrated circuit

Publications (1)

Publication Number Publication Date
JPS56134764A true JPS56134764A (en) 1981-10-21

Family

ID=12531726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3867180A Pending JPS56134764A (en) 1980-03-26 1980-03-26 Manufacturing of bipolar integrated circuit

Country Status (1)

Country Link
JP (1) JPS56134764A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715456A (en) * 1980-07-02 1982-01-26 Mitsubishi Electric Corp Semiconductor integrated circuit device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122672A (en) * 1973-03-24 1974-11-22
JPS5236391A (en) * 1975-09-18 1977-03-19 Toshiba Tungaloy Co Ltd Cut-maching apparatus
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122672A (en) * 1973-03-24 1974-11-22
JPS5236391A (en) * 1975-09-18 1977-03-19 Toshiba Tungaloy Co Ltd Cut-maching apparatus
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715456A (en) * 1980-07-02 1982-01-26 Mitsubishi Electric Corp Semiconductor integrated circuit device

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