JPS5773962A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5773962A
JPS5773962A JP10082881A JP10082881A JPS5773962A JP S5773962 A JPS5773962 A JP S5773962A JP 10082881 A JP10082881 A JP 10082881A JP 10082881 A JP10082881 A JP 10082881A JP S5773962 A JPS5773962 A JP S5773962A
Authority
JP
Japan
Prior art keywords
circuit
resistance element
input terminal
separation region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10082881A
Other languages
Japanese (ja)
Other versions
JPS5937582B2 (en
Inventor
Hiroshi Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56100828A priority Critical patent/JPS5937582B2/en
Publication of JPS5773962A publication Critical patent/JPS5773962A/en
Publication of JPS5937582B2 publication Critical patent/JPS5937582B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent failure of circuits by a device wherein a protective resistance element for a multi-power source circuit is independently formed in an insulative separation region and one of resistance terminals is connected to the separation region to serve as an input terminal, thereby to maintain a constant resistance value irrespective of power potential. CONSTITUTION:In a circuit using two or more power sources, a protective resistance element is serially inserted at an input terminal of the circuit. In case of a circuit formed of an n-P-N transistor, for example, an N type diffusion layer 8 is formed in a P type substrate 7 as a separation region and then, a P type region 9 is formed within the layer 8 under the base process to constitute a protective resistance element. This resistance element is formed in the number of one for each separation region. One terminal 11 of the resistance element is connected to the region 8 to constitute an input terminal, while the other terminal 12 thereof is connected to an input terminal of a CML circuit or the like. By so doing, even when the power source supplying the highest potential is disconnected, there occurs no parasitic transistor effect. Thus, a resistance value of the element can be maintained at a constant level and hence, failure due to the excessive current can be prevented positively.
JP56100828A 1981-06-29 1981-06-29 Semiconductor integrated circuit device Expired JPS5937582B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56100828A JPS5937582B2 (en) 1981-06-29 1981-06-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56100828A JPS5937582B2 (en) 1981-06-29 1981-06-29 Semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5494072A Division JPS4911588A (en) 1972-06-01 1972-06-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP11017584A Division JPS6035555A (en) 1984-05-30 1984-05-30 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5773962A true JPS5773962A (en) 1982-05-08
JPS5937582B2 JPS5937582B2 (en) 1984-09-11

Family

ID=14284178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56100828A Expired JPS5937582B2 (en) 1981-06-29 1981-06-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5937582B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491274A (en) * 1965-06-04 1970-01-20 Centre Electron Horloger Diffused resistance in an integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491274A (en) * 1965-06-04 1970-01-20 Centre Electron Horloger Diffused resistance in an integrated circuit

Also Published As

Publication number Publication date
JPS5937582B2 (en) 1984-09-11

Similar Documents

Publication Publication Date Title
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
EP0166581A3 (en) Cmos circuit overvoltage protection
JPS57133712A (en) Constituting method of delay circuit in master slice ic
KR850005736A (en) CMOS Integrated Circuit
KR950030309A (en) Protection circuit of semiconductor device
EP0261370A3 (en) Integrated circuit having latch-up protection circuit fabricated by complementary mos technology
EP0261371A3 (en) Integrated circuit with latch-up protection circuit fabricated by complementary mos technology
JPS5773962A (en) Semiconductor integrated circuit device
JPS55118519A (en) Combustion control circuit
FR2377704A1 (en) Integrated injection logic semiconductor circuit - has two highly doped zones separated from the surface by lightly doped zones for low voltage, high power applications
JPS5717227A (en) Integrated circuit device
JPS6484733A (en) Semiconductor device
JPS57180158A (en) Input protector for complementary mos integrated circuit
SU1410006A1 (en) Current source
SU1476445A1 (en) Current source for switching load current
JPS6423565A (en) Reference voltage generation circuit
JPS5655070A (en) Semiconductor bidirectional switch
JPS6442165A (en) Coms semiconductor ic device
JPS5458374A (en) Complementary mis ic
JPS5728362A (en) Semiconductor device
JPS57141951A (en) Semiconductor integrated circuit
JPS56134764A (en) Manufacturing of bipolar integrated circuit
JPS5773964A (en) Semiconductor integrated circuit device
JPS6432666A (en) Surge protective integrated circuit
JPS5366187A (en) Semiconductor ingegrated circuit device and its production