JPS645053A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS645053A
JPS645053A JP62160589A JP16058987A JPS645053A JP S645053 A JPS645053 A JP S645053A JP 62160589 A JP62160589 A JP 62160589A JP 16058987 A JP16058987 A JP 16058987A JP S645053 A JPS645053 A JP S645053A
Authority
JP
Japan
Prior art keywords
diffused layer
substrate
pattern
mos transistor
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62160589A
Other languages
Japanese (ja)
Other versions
JPH0831536B2 (en
Inventor
Masahiro Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP62160589A priority Critical patent/JPH0831536B2/en
Publication of JPS645053A publication Critical patent/JPS645053A/en
Publication of JPH0831536B2 publication Critical patent/JPH0831536B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To provide conduction between a substrate or well and interconnections, by implanting the same dopant as that of the substrate or well, into a diffused layer of an unused source electrode to which a diffused layer pattern for specific code data has not yet been added. CONSTITUTION:A prepared basic pattern has a source line 4 connected to a source electrode common to all the codes, a diffused layer 5 corresponding to a source of a MOS transistor cell connected to the source electrode, a gate polysilicon 1, an output line 3 and a contact 2 for connecting the output line 3 with the drain electrode of the MOS transistor. Pattern of a part of the diffused layer where the MOS transistor is present, said part being variable according to various codes, is added to the basic pattern so that the code is inputted. An effect equivalent to that of substrate contact can be obtained, by adding a doped layer 6 doped with the same dopant as the substrate to a unused diffused layer 7 by means of the additional pattern.
JP62160589A 1987-06-26 1987-06-26 Semiconductor integrated circuit Expired - Lifetime JPH0831536B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160589A JPH0831536B2 (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160589A JPH0831536B2 (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS645053A true JPS645053A (en) 1989-01-10
JPH0831536B2 JPH0831536B2 (en) 1996-03-27

Family

ID=15718223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160589A Expired - Lifetime JPH0831536B2 (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0831536B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242346B1 (en) * 1997-08-13 2001-06-05 United Microelectronics Corporation Metallization for uncovered contacts and vias

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242346B1 (en) * 1997-08-13 2001-06-05 United Microelectronics Corporation Metallization for uncovered contacts and vias

Also Published As

Publication number Publication date
JPH0831536B2 (en) 1996-03-27

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