JPS57127335A - Output circuit of constant value level - Google Patents
Output circuit of constant value levelInfo
- Publication number
- JPS57127335A JPS57127335A JP1246181A JP1246181A JPS57127335A JP S57127335 A JPS57127335 A JP S57127335A JP 1246181 A JP1246181 A JP 1246181A JP 1246181 A JP1246181 A JP 1246181A JP S57127335 A JPS57127335 A JP S57127335A
- Authority
- JP
- Japan
- Prior art keywords
- level
- trt2
- delivered
- constant value
- output circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To deliver a constant value level without adding any special process, by selecting the 3rd or 4th MOS transistor in accordance with the signal level to be delivered and then electrically connecting the selected transistor to the 1st or 2nd MOS transistor. CONSTITUTION:The regions to be used for the source and the drain of the 3rd and 4th MOS transistors containing the 2nd conductive channel are provided to the same semiconductor substrate and in correspondence to the 1st and 2nd MOS transistors TRT1 and TRT2. Then the 3rd or 4th TRT3 or TRT4 is selected according to the signal level to be delivered and then electrically connected to the 1st or 2nd TRT1 or TRT2. Accordingly the TRT2 is turned on or off in the working state, and the level 1 of a power supply +V or level 0 of an earth level is delivered to an output terminal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1246181A JPS57127335A (en) | 1981-01-29 | 1981-01-29 | Output circuit of constant value level |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1246181A JPS57127335A (en) | 1981-01-29 | 1981-01-29 | Output circuit of constant value level |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57127335A true JPS57127335A (en) | 1982-08-07 |
JPH0216061B2 JPH0216061B2 (en) | 1990-04-16 |
Family
ID=11805987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1246181A Granted JPS57127335A (en) | 1981-01-29 | 1981-01-29 | Output circuit of constant value level |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57127335A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5996598A (en) * | 1982-11-24 | 1984-06-04 | Mitsubishi Electric Corp | Read-only semiconductor memory |
EP0162370A2 (en) * | 1984-05-24 | 1985-11-27 | General Electric Company | Voltage comparator |
JPS63108596A (en) * | 1986-10-27 | 1988-05-13 | Nec Corp | Read only memory device |
JPH04368698A (en) * | 1991-06-17 | 1992-12-21 | Seiko Instr Inc | Semiconductor integrated circuit |
-
1981
- 1981-01-29 JP JP1246181A patent/JPS57127335A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5996598A (en) * | 1982-11-24 | 1984-06-04 | Mitsubishi Electric Corp | Read-only semiconductor memory |
EP0162370A2 (en) * | 1984-05-24 | 1985-11-27 | General Electric Company | Voltage comparator |
JPS63108596A (en) * | 1986-10-27 | 1988-05-13 | Nec Corp | Read only memory device |
JPH04368698A (en) * | 1991-06-17 | 1992-12-21 | Seiko Instr Inc | Semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH0216061B2 (en) | 1990-04-16 |
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