JPS5582467A - Mis type integrated circuit with schottky clamp diode - Google Patents

Mis type integrated circuit with schottky clamp diode

Info

Publication number
JPS5582467A
JPS5582467A JP15620378A JP15620378A JPS5582467A JP S5582467 A JPS5582467 A JP S5582467A JP 15620378 A JP15620378 A JP 15620378A JP 15620378 A JP15620378 A JP 15620378A JP S5582467 A JPS5582467 A JP S5582467A
Authority
JP
Japan
Prior art keywords
input
diode
clamp diode
schottky
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15620378A
Other languages
Japanese (ja)
Inventor
Noriyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15620378A priority Critical patent/JPS5582467A/en
Publication of JPS5582467A publication Critical patent/JPS5582467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent parasitic effect, by mounting a Schottky diode, which clamps when the input or output terminal potential of an MISIC using an Si substrate becomes not less than line voltage fed or not more than earth potential, between the input or output terminal and a power source supplied. CONSTITUTION:A CMOS-IC containing a p-channel MOST 4 and an n-channel MOST 5 is formed to an Si substrate. The gates of the both MOSTs are connected in common, and connected to input IN through resistor 3. A darin of the p-MOST 4 is connected to a power source Vcc, and the source is connected to a drain of the n-MOST 5 is common and connected to output OUT. A source of the n-MOST 5 is earthed. A cathode of a Schottky clamp diode 6 that an anode is earthed is connected to the gates of the both MOSTs, and the diode clamps when the input IN becomes not more than earthing potential. The other Schottky clamp diode 7 is connected between the drain of the p-MOST 4 and the input IN, and the diode clamps when the input IN becomes not less than line voltage Vcc.
JP15620378A 1978-12-18 1978-12-18 Mis type integrated circuit with schottky clamp diode Pending JPS5582467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15620378A JPS5582467A (en) 1978-12-18 1978-12-18 Mis type integrated circuit with schottky clamp diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15620378A JPS5582467A (en) 1978-12-18 1978-12-18 Mis type integrated circuit with schottky clamp diode

Publications (1)

Publication Number Publication Date
JPS5582467A true JPS5582467A (en) 1980-06-21

Family

ID=15622611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15620378A Pending JPS5582467A (en) 1978-12-18 1978-12-18 Mis type integrated circuit with schottky clamp diode

Country Status (1)

Country Link
JP (1) JPS5582467A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182861A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
WO1990001801A2 (en) * 1988-08-10 1990-02-22 Robert Bosch Gmbh Monolithically integrated electronic apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182861A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
WO1990001801A2 (en) * 1988-08-10 1990-02-22 Robert Bosch Gmbh Monolithically integrated electronic apparatus
WO1990001801A3 (en) * 1988-08-10 1990-04-05 Bosch Gmbh Robert Monolithically integrated electronic apparatus

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