JPS52119190A - Semiconductor integration circuit - Google Patents

Semiconductor integration circuit

Info

Publication number
JPS52119190A
JPS52119190A JP3577276A JP3577276A JPS52119190A JP S52119190 A JPS52119190 A JP S52119190A JP 3577276 A JP3577276 A JP 3577276A JP 3577276 A JP3577276 A JP 3577276A JP S52119190 A JPS52119190 A JP S52119190A
Authority
JP
Japan
Prior art keywords
integration circuit
semiconductor integration
semiconductor
input
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3577276A
Other languages
Japanese (ja)
Inventor
Fumio Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3577276A priority Critical patent/JPS52119190A/en
Publication of JPS52119190A publication Critical patent/JPS52119190A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE: To obtain the high integrated and high stable IC by mounting the combinational logical operation circuit with the larger number of input gates than the number of elements enables to be formed on the one chip, and by reducing the dispersion of each parameter of the multi-input gate.
COPYRIGHT: (C)1977,JPO&Japio
JP3577276A 1976-03-31 1976-03-31 Semiconductor integration circuit Pending JPS52119190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3577276A JPS52119190A (en) 1976-03-31 1976-03-31 Semiconductor integration circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3577276A JPS52119190A (en) 1976-03-31 1976-03-31 Semiconductor integration circuit

Publications (1)

Publication Number Publication Date
JPS52119190A true JPS52119190A (en) 1977-10-06

Family

ID=12451156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3577276A Pending JPS52119190A (en) 1976-03-31 1976-03-31 Semiconductor integration circuit

Country Status (1)

Country Link
JP (1) JPS52119190A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062153A (en) * 1983-09-08 1985-04-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Resistive gate type field effect transistor logic circuit
JPH02201964A (en) * 1989-01-30 1990-08-10 Sumitomo Metal Ind Ltd Mos type transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS4990886A (en) * 1972-12-28 1974-08-30
JPS51126772A (en) * 1975-04-25 1976-11-05 Nippon Denso Co Ltd Electrolytic effect type semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS4990886A (en) * 1972-12-28 1974-08-30
JPS51126772A (en) * 1975-04-25 1976-11-05 Nippon Denso Co Ltd Electrolytic effect type semiconductor unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062153A (en) * 1983-09-08 1985-04-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Resistive gate type field effect transistor logic circuit
JPH056351B2 (en) * 1983-09-08 1993-01-26 Intaanashonaru Bijinesu Mashiinzu Corp
JPH02201964A (en) * 1989-01-30 1990-08-10 Sumitomo Metal Ind Ltd Mos type transistor

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