JPS5242386A - Semiconducteor device - Google Patents

Semiconducteor device

Info

Publication number
JPS5242386A
JPS5242386A JP11835675A JP11835675A JPS5242386A JP S5242386 A JPS5242386 A JP S5242386A JP 11835675 A JP11835675 A JP 11835675A JP 11835675 A JP11835675 A JP 11835675A JP S5242386 A JPS5242386 A JP S5242386A
Authority
JP
Japan
Prior art keywords
semiconducteor
emitter
protecting
transistor
insert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11835675A
Other languages
Japanese (ja)
Inventor
Masayuki Kurozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11835675A priority Critical patent/JPS5242386A/en
Publication of JPS5242386A publication Critical patent/JPS5242386A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To insert a protection circuit within small and isolated regions in transistor Tr thereby protecting the emitter-base junction against high voltage applied to the Tr within IC.
JP11835675A 1975-09-30 1975-09-30 Semiconducteor device Pending JPS5242386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11835675A JPS5242386A (en) 1975-09-30 1975-09-30 Semiconducteor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11835675A JPS5242386A (en) 1975-09-30 1975-09-30 Semiconducteor device

Publications (1)

Publication Number Publication Date
JPS5242386A true JPS5242386A (en) 1977-04-01

Family

ID=14734666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11835675A Pending JPS5242386A (en) 1975-09-30 1975-09-30 Semiconducteor device

Country Status (1)

Country Link
JP (1) JPS5242386A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544759A (en) * 1978-09-25 1980-03-29 Nec Corp Semiconductor
JPS5623901U (en) * 1979-07-31 1981-03-04
JPS56111259A (en) * 1980-02-08 1981-09-02 Hitachi Ltd Semiconductor integrated circuit
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
JPS57135902A (en) * 1981-02-14 1982-08-21 Ono Gijutsu Kenkyusho:Kk Tunable cylindrical lens
JPS5811236U (en) * 1981-07-15 1983-01-25 日本電気株式会社 Electrical component
JPS5814819A (en) * 1981-07-20 1983-01-27 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド Variable focal length lens assembly
JPS58186959A (en) * 1982-04-26 1983-11-01 Nec Corp Semiconductor device
JPS6045061A (en) * 1983-08-22 1985-03-11 Fuji Electric Co Ltd Vertical p-n-p transistor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544759A (en) * 1978-09-25 1980-03-29 Nec Corp Semiconductor
JPS5623901U (en) * 1979-07-31 1981-03-04
JPH035067B2 (en) * 1980-02-08 1991-01-24 Hitachi Ltd
JPS56111259A (en) * 1980-02-08 1981-09-02 Hitachi Ltd Semiconductor integrated circuit
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
JPH0534831B2 (en) * 1980-09-22 1993-05-25 Hitachi Ltd
JPS57135902A (en) * 1981-02-14 1982-08-21 Ono Gijutsu Kenkyusho:Kk Tunable cylindrical lens
JPS5811236U (en) * 1981-07-15 1983-01-25 日本電気株式会社 Electrical component
JPS5814819A (en) * 1981-07-20 1983-01-27 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド Variable focal length lens assembly
JPS6336647B2 (en) * 1981-07-20 1988-07-21 Gerber Scient Inc
JPS58186959A (en) * 1982-04-26 1983-11-01 Nec Corp Semiconductor device
JPS6045061A (en) * 1983-08-22 1985-03-11 Fuji Electric Co Ltd Vertical p-n-p transistor
JPH0314224B2 (en) * 1983-08-22 1991-02-26 Fuji Electric Co Ltd

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