JPS5756960A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5756960A JPS5756960A JP55130721A JP13072180A JPS5756960A JP S5756960 A JPS5756960 A JP S5756960A JP 55130721 A JP55130721 A JP 55130721A JP 13072180 A JP13072180 A JP 13072180A JP S5756960 A JPS5756960 A JP S5756960A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- emitter
- semiconductor integrated
- base
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000003068 static effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the static breakdown of a semiconductor integrated circuit device by inserting a high speed diode having the prescribed internal resistance value between one base connecting point of a pair of transistors forming an ECL and a power source of emitter or collector side. CONSTITUTION:A diode is inserted in a circuit 3 having transistors(TR)Q1-Q3, resistors RB, RE, RC1, RC2 and RP and connected to an input terminal 1 to protect the circuit 3. A diode D11 is, for example, inserted between an emitter side power source VEE and the input terminal 1, and is formed with reverse breakdown voltage equivalent or higher than the withstand of the TRQ1. For example, the emitter 72 of the transistor is shortcircuited with the base 69, and the base and collector junction is used as a diode D11. In this manner, the static breakdown of the TRQ1 and the resistor RB can be prevented, and of the diode itself can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55130721A JPS5756960A (en) | 1980-09-22 | 1980-09-22 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55130721A JPS5756960A (en) | 1980-09-22 | 1980-09-22 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5756960A true JPS5756960A (en) | 1982-04-05 |
JPH0534831B2 JPH0534831B2 (en) | 1993-05-25 |
Family
ID=15041034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55130721A Granted JPS5756960A (en) | 1980-09-22 | 1980-09-22 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5756960A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62104156A (en) * | 1985-10-29 | 1987-05-14 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Electronic semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242386A (en) * | 1975-09-30 | 1977-04-01 | Nec Corp | Semiconducteor device |
JPS52102689A (en) * | 1976-02-24 | 1977-08-29 | Philips Nv | Semiconductor device having safety circuit |
JPS5418168U (en) * | 1977-06-06 | 1979-02-06 | ||
JPS5422756A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Reinforcing method for braun tube |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5192214A (en) * | 1975-02-10 | 1976-08-12 | Sokoshino renzokuoritatamyofuoomaanoozuno seizoho |
-
1980
- 1980-09-22 JP JP55130721A patent/JPS5756960A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242386A (en) * | 1975-09-30 | 1977-04-01 | Nec Corp | Semiconducteor device |
JPS52102689A (en) * | 1976-02-24 | 1977-08-29 | Philips Nv | Semiconductor device having safety circuit |
JPS5418168U (en) * | 1977-06-06 | 1979-02-06 | ||
JPS5422756A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Reinforcing method for braun tube |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62104156A (en) * | 1985-10-29 | 1987-05-14 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Electronic semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0534831B2 (en) | 1993-05-25 |
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