JPS5756960A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5756960A
JPS5756960A JP55130721A JP13072180A JPS5756960A JP S5756960 A JPS5756960 A JP S5756960A JP 55130721 A JP55130721 A JP 55130721A JP 13072180 A JP13072180 A JP 13072180A JP S5756960 A JPS5756960 A JP S5756960A
Authority
JP
Japan
Prior art keywords
diode
emitter
semiconductor integrated
base
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130721A
Other languages
Japanese (ja)
Other versions
JPH0534831B2 (en
Inventor
Kazuo Ito
Akio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55130721A priority Critical patent/JPS5756960A/en
Publication of JPS5756960A publication Critical patent/JPS5756960A/en
Publication of JPH0534831B2 publication Critical patent/JPH0534831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the static breakdown of a semiconductor integrated circuit device by inserting a high speed diode having the prescribed internal resistance value between one base connecting point of a pair of transistors forming an ECL and a power source of emitter or collector side. CONSTITUTION:A diode is inserted in a circuit 3 having transistors(TR)Q1-Q3, resistors RB, RE, RC1, RC2 and RP and connected to an input terminal 1 to protect the circuit 3. A diode D11 is, for example, inserted between an emitter side power source VEE and the input terminal 1, and is formed with reverse breakdown voltage equivalent or higher than the withstand of the TRQ1. For example, the emitter 72 of the transistor is shortcircuited with the base 69, and the base and collector junction is used as a diode D11. In this manner, the static breakdown of the TRQ1 and the resistor RB can be prevented, and of the diode itself can be prevented.
JP55130721A 1980-09-22 1980-09-22 Semiconductor integrated circuit device Granted JPS5756960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130721A JPS5756960A (en) 1980-09-22 1980-09-22 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130721A JPS5756960A (en) 1980-09-22 1980-09-22 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5756960A true JPS5756960A (en) 1982-04-05
JPH0534831B2 JPH0534831B2 (en) 1993-05-25

Family

ID=15041034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130721A Granted JPS5756960A (en) 1980-09-22 1980-09-22 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5756960A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104156A (en) * 1985-10-29 1987-05-14 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Electronic semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242386A (en) * 1975-09-30 1977-04-01 Nec Corp Semiconducteor device
JPS52102689A (en) * 1976-02-24 1977-08-29 Philips Nv Semiconductor device having safety circuit
JPS5418168U (en) * 1977-06-06 1979-02-06
JPS5422756A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Reinforcing method for braun tube

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192214A (en) * 1975-02-10 1976-08-12 Sokoshino renzokuoritatamyofuoomaanoozuno seizoho

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242386A (en) * 1975-09-30 1977-04-01 Nec Corp Semiconducteor device
JPS52102689A (en) * 1976-02-24 1977-08-29 Philips Nv Semiconductor device having safety circuit
JPS5418168U (en) * 1977-06-06 1979-02-06
JPS5422756A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Reinforcing method for braun tube

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104156A (en) * 1985-10-29 1987-05-14 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Electronic semiconductor device

Also Published As

Publication number Publication date
JPH0534831B2 (en) 1993-05-25

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