JPS57148369A - Composite semiconductor device - Google Patents

Composite semiconductor device

Info

Publication number
JPS57148369A
JPS57148369A JP56033419A JP3341981A JPS57148369A JP S57148369 A JPS57148369 A JP S57148369A JP 56033419 A JP56033419 A JP 56033419A JP 3341981 A JP3341981 A JP 3341981A JP S57148369 A JPS57148369 A JP S57148369A
Authority
JP
Japan
Prior art keywords
collector
bases
resistor
barrier
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56033419A
Other languages
Japanese (ja)
Other versions
JPH0130308B2 (en
Inventor
Hiroaki Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56033419A priority Critical patent/JPS57148369A/en
Publication of JPS57148369A publication Critical patent/JPS57148369A/en
Publication of JPH0130308B2 publication Critical patent/JPH0130308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive improvement of the characteristics of collector-emitter saturation voltage on a collector low-current region by a method wherein a barrier, having the density higher than the impurity density of a collector and the same conductive type as the collector, is formed surrounding each transistor. CONSTITUTION:The bases 25 and 27, and emitters 26 and 28 are formed separately on the collector 29 region of transistors (TR) 21 and 22. Also, a biasing resistor 23, having the conductive property same as the bases of the TR21 and 22, is formed between above-mentioned bases, and the base electrode of TR21 and 22 are formed in the connected state. And, the borrier 51 is formed in such a manner that TR21, 22 and the resistor 23 are surrounded respectively. The barrier 51 is formed by introducing the impurities of the same type as the collector 29 and the density higher than the impurity density of the collector 29. Accordingly, the generation of an inversion layer to the collector side of the TR21, 22 and the resistor 23 can be stopped. Therefore, the increase of collector saturation voltage in the low current region of a collector current can be prevented by the static characteristic of the semiconductor element having a darlington connection.
JP56033419A 1981-03-09 1981-03-09 Composite semiconductor device Granted JPS57148369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56033419A JPS57148369A (en) 1981-03-09 1981-03-09 Composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56033419A JPS57148369A (en) 1981-03-09 1981-03-09 Composite semiconductor device

Publications (2)

Publication Number Publication Date
JPS57148369A true JPS57148369A (en) 1982-09-13
JPH0130308B2 JPH0130308B2 (en) 1989-06-19

Family

ID=12386043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56033419A Granted JPS57148369A (en) 1981-03-09 1981-03-09 Composite semiconductor device

Country Status (1)

Country Link
JP (1) JPS57148369A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054349U (en) * 1983-09-21 1985-04-16 日本電気株式会社 darlington transistor
JPS61206262A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104779A (en) * 1978-02-03 1979-08-17 Fuji Electric Co Ltd Semiconductor device
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device
JPS5545258U (en) * 1978-09-19 1980-03-25
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor
JPS5629360A (en) * 1979-08-17 1981-03-24 Nec Corp Composite semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51136592A (en) * 1975-05-22 1976-11-26 Nippon Steel Corp Process for reproducing catalyst for clea ning treatment of waste gas

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104779A (en) * 1978-02-03 1979-08-17 Fuji Electric Co Ltd Semiconductor device
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device
JPS5545258U (en) * 1978-09-19 1980-03-25
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor
JPS5629360A (en) * 1979-08-17 1981-03-24 Nec Corp Composite semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054349U (en) * 1983-09-21 1985-04-16 日本電気株式会社 darlington transistor
JPS61206262A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device

Also Published As

Publication number Publication date
JPH0130308B2 (en) 1989-06-19

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