JPS57148369A - Composite semiconductor device - Google Patents
Composite semiconductor deviceInfo
- Publication number
- JPS57148369A JPS57148369A JP56033419A JP3341981A JPS57148369A JP S57148369 A JPS57148369 A JP S57148369A JP 56033419 A JP56033419 A JP 56033419A JP 3341981 A JP3341981 A JP 3341981A JP S57148369 A JPS57148369 A JP S57148369A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- bases
- resistor
- barrier
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002131 composite material Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To contrive improvement of the characteristics of collector-emitter saturation voltage on a collector low-current region by a method wherein a barrier, having the density higher than the impurity density of a collector and the same conductive type as the collector, is formed surrounding each transistor. CONSTITUTION:The bases 25 and 27, and emitters 26 and 28 are formed separately on the collector 29 region of transistors (TR) 21 and 22. Also, a biasing resistor 23, having the conductive property same as the bases of the TR21 and 22, is formed between above-mentioned bases, and the base electrode of TR21 and 22 are formed in the connected state. And, the borrier 51 is formed in such a manner that TR21, 22 and the resistor 23 are surrounded respectively. The barrier 51 is formed by introducing the impurities of the same type as the collector 29 and the density higher than the impurity density of the collector 29. Accordingly, the generation of an inversion layer to the collector side of the TR21, 22 and the resistor 23 can be stopped. Therefore, the increase of collector saturation voltage in the low current region of a collector current can be prevented by the static characteristic of the semiconductor element having a darlington connection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56033419A JPS57148369A (en) | 1981-03-09 | 1981-03-09 | Composite semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56033419A JPS57148369A (en) | 1981-03-09 | 1981-03-09 | Composite semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57148369A true JPS57148369A (en) | 1982-09-13 |
JPH0130308B2 JPH0130308B2 (en) | 1989-06-19 |
Family
ID=12386043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56033419A Granted JPS57148369A (en) | 1981-03-09 | 1981-03-09 | Composite semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57148369A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054349U (en) * | 1983-09-21 | 1985-04-16 | 日本電気株式会社 | darlington transistor |
JPS61206262A (en) * | 1985-03-11 | 1986-09-12 | Shindengen Electric Mfg Co Ltd | High withstanding-voltage planar type semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54104779A (en) * | 1978-02-03 | 1979-08-17 | Fuji Electric Co Ltd | Semiconductor device |
JPS54105977A (en) * | 1978-02-08 | 1979-08-20 | Hitachi Ltd | Semiconductor device |
JPS5545258U (en) * | 1978-09-19 | 1980-03-25 | ||
JPS5559768A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Darlington power transistor |
JPS5629360A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Composite semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136592A (en) * | 1975-05-22 | 1976-11-26 | Nippon Steel Corp | Process for reproducing catalyst for clea ning treatment of waste gas |
-
1981
- 1981-03-09 JP JP56033419A patent/JPS57148369A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54104779A (en) * | 1978-02-03 | 1979-08-17 | Fuji Electric Co Ltd | Semiconductor device |
JPS54105977A (en) * | 1978-02-08 | 1979-08-20 | Hitachi Ltd | Semiconductor device |
JPS5545258U (en) * | 1978-09-19 | 1980-03-25 | ||
JPS5559768A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Darlington power transistor |
JPS5629360A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Composite semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054349U (en) * | 1983-09-21 | 1985-04-16 | 日本電気株式会社 | darlington transistor |
JPS61206262A (en) * | 1985-03-11 | 1986-09-12 | Shindengen Electric Mfg Co Ltd | High withstanding-voltage planar type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0130308B2 (en) | 1989-06-19 |
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