GB2005071B - Junction field effect transistor logic semiconductor device - Google Patents

Junction field effect transistor logic semiconductor device

Info

Publication number
GB2005071B
GB2005071B GB7833006A GB7833006A GB2005071B GB 2005071 B GB2005071 B GB 2005071B GB 7833006 A GB7833006 A GB 7833006A GB 7833006 A GB7833006 A GB 7833006A GB 2005071 B GB2005071 B GB 2005071B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
field effect
effect transistor
transistor logic
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7833006A
Other versions
GB2005071A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of GB2005071A publication Critical patent/GB2005071A/en
Application granted granted Critical
Publication of GB2005071B publication Critical patent/GB2005071B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
GB7833006A 1977-08-19 1978-08-11 Junction field effect transistor logic semiconductor device Expired GB2005071B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9999477A JPS5432986A (en) 1977-08-19 1977-08-19 Semiconductor device

Publications (2)

Publication Number Publication Date
GB2005071A GB2005071A (en) 1979-04-11
GB2005071B true GB2005071B (en) 1982-03-17

Family

ID=14262177

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7833006A Expired GB2005071B (en) 1977-08-19 1978-08-11 Junction field effect transistor logic semiconductor device

Country Status (4)

Country Link
JP (1) JPS5432986A (en)
CH (1) CH623168A5 (en)
DE (1) DE2833841A1 (en)
GB (1) GB2005071B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123115Y2 (en) * 1980-02-09 1986-07-10
DE3841777C2 (en) * 1988-12-12 1994-06-23 Telefunken Microelectron Semiconductor device with vertical npn planar transistor

Also Published As

Publication number Publication date
GB2005071A (en) 1979-04-11
CH623168A5 (en) 1981-05-15
DE2833841A1 (en) 1979-03-01
JPS5432986A (en) 1979-03-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee