JPS5698878A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS5698878A JPS5698878A JP18217480A JP18217480A JPS5698878A JP S5698878 A JPS5698878 A JP S5698878A JP 18217480 A JP18217480 A JP 18217480A JP 18217480 A JP18217480 A JP 18217480A JP S5698878 A JPS5698878 A JP S5698878A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- junction type
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7931682A FR2472838A1 (en) | 1979-12-26 | 1979-12-26 | FIELD EFFECT TRANSISTOR OF JUNCTION TYPE AND METHOD FOR MAKING SAME |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5698878A true JPS5698878A (en) | 1981-08-08 |
Family
ID=9233163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18217480A Pending JPS5698878A (en) | 1979-12-26 | 1980-12-24 | Junction type field effect transistor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5698878A (en) |
DE (1) | DE3046855A1 (en) |
FR (1) | FR2472838A1 (en) |
GB (1) | GB2066571A (en) |
NL (1) | NL8006949A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62243369A (en) * | 1986-04-15 | 1987-10-23 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986002203A1 (en) * | 1984-10-05 | 1986-04-10 | Analog Devices, Incorporated | Low-leakage jfet |
DE102004051081A1 (en) * | 2004-10-19 | 2006-04-27 | Austriamicrosystems Ag | JFET and manufacturing process |
US7642617B2 (en) * | 2005-09-28 | 2010-01-05 | Agere Systems Inc. | Integrated circuit with depletion mode JFET |
US7557393B2 (en) | 2006-08-10 | 2009-07-07 | Dsm Solutions, Inc. | JFET with built in back gate in either SOI or bulk silicon |
US20110084318A1 (en) * | 2009-10-08 | 2011-04-14 | Aaron Gibby | Depleted top gate junction field effect transistor (dtgjfet) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161621C (en) * | 1968-10-16 | 1980-02-15 | Philips Nv | SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR. |
DE2630079A1 (en) * | 1976-07-03 | 1978-01-05 | Licentia Gmbh | BARRIER LAYER EFFECT TRANSISTOR |
JPS5365078A (en) * | 1976-11-24 | 1978-06-10 | Toshiba Corp | Production of junction type field effect transistor |
DE2702282A1 (en) * | 1977-01-20 | 1978-07-27 | Siemens Ag | Contacts and/or conductor paths made on semiconductors - where substrate is alternately exposed to vapour from two evaporators |
-
1979
- 1979-12-26 FR FR7931682A patent/FR2472838A1/en not_active Withdrawn
-
1980
- 1980-12-12 DE DE19803046855 patent/DE3046855A1/en not_active Withdrawn
- 1980-12-19 GB GB8040887A patent/GB2066571A/en not_active Withdrawn
- 1980-12-22 NL NL8006949A patent/NL8006949A/en not_active Application Discontinuation
- 1980-12-24 JP JP18217480A patent/JPS5698878A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62243369A (en) * | 1986-04-15 | 1987-10-23 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR2472838A1 (en) | 1981-07-03 |
GB2066571A (en) | 1981-07-08 |
NL8006949A (en) | 1981-07-16 |
DE3046855A1 (en) | 1981-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3071139D1 (en) | Vertical field effect transistor | |
DE2967520D1 (en) | Field effect transistor circuit configuration | |
GB2002958B (en) | Field effect transistors | |
JPS54114188A (en) | Field effect transistor | |
JPS55158675A (en) | High piezooelectric mos field effect transistor | |
JPS5580359A (en) | Field effect transistor | |
GB2106711B (en) | Field effect transistor | |
JPS5645079A (en) | High cuttoffffrequency electriccfielddeffect transistor | |
DE3067237D1 (en) | Transistor structure | |
GB2100926B (en) | Field effect transistors | |
JPS54131884A (en) | Field effect transistor having narrow channel | |
JPS5680161A (en) | Bipolar transistor | |
DE3063218D1 (en) | A field effect transistor | |
DE3273867D1 (en) | Field effect transistor | |
GB2018540B (en) | Type field effect transistor amplifiers | |
JPS567481A (en) | Field effect type transistor | |
GB2051479B (en) | Light-controllable transistor | |
GB2030769B (en) | Field effect transistor | |
GB8300617D0 (en) | Junction field effect transistor | |
GB2021861B (en) | Field effect transistors | |
JPS5698878A (en) | Junction type field effect transistor | |
GB2052860B (en) | Junction field effect transistor | |
GB2042259B (en) | Lateral pnp transistor | |
JPS553691A (en) | Integrated circuit having junction field effect transistor | |
JPS5627966A (en) | Transistor |