JPS5619655A - Semiconductor ic - Google Patents

Semiconductor ic

Info

Publication number
JPS5619655A
JPS5619655A JP9587579A JP9587579A JPS5619655A JP S5619655 A JPS5619655 A JP S5619655A JP 9587579 A JP9587579 A JP 9587579A JP 9587579 A JP9587579 A JP 9587579A JP S5619655 A JPS5619655 A JP S5619655A
Authority
JP
Japan
Prior art keywords
capacitor
transistor
input terminal
earth terminal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9587579A
Other languages
Japanese (ja)
Inventor
Takeo Komatsu
Toshihiko Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9587579A priority Critical patent/JPS5619655A/en
Publication of JPS5619655A publication Critical patent/JPS5619655A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect an FET gate from an instantaneous high tension caused by a static electricity charged on a human body by a method wherein an NPN-type transistor and a capacitor are provided between an input terminal of MISFET, with which an IC is constituted, and an earth terminal. CONSTITUTION:The input terminal T is connected to a gate of the MISFET element 2 to be protected and the earth terminal E is connected to a source or a drain of the element 2 and an element substrate. Then, in order to protect said element 2 from an instantaneous high tension, an emitter of a transistor 8 is connected to the input terminal T, a collector is connected to the earth terminal E and also a base is connected to the earth terminal E through an intermediate of a capacitor 9 respectively using the NPN-type transistor 8 and the capacitor 9. A floating capacity of a transistor can be substituted for the above capacitor 9. As a result, the gate of the element 2 will not be broken because the transistor 8 bypasses instantly any high voltage current applied on the input terminal T.
JP9587579A 1979-07-26 1979-07-26 Semiconductor ic Pending JPS5619655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9587579A JPS5619655A (en) 1979-07-26 1979-07-26 Semiconductor ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9587579A JPS5619655A (en) 1979-07-26 1979-07-26 Semiconductor ic

Publications (1)

Publication Number Publication Date
JPS5619655A true JPS5619655A (en) 1981-02-24

Family

ID=14149511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9587579A Pending JPS5619655A (en) 1979-07-26 1979-07-26 Semiconductor ic

Country Status (1)

Country Link
JP (1) JPS5619655A (en)

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