JPS5598867A - Protecting device - Google Patents

Protecting device

Info

Publication number
JPS5598867A
JPS5598867A JP590779A JP590779A JPS5598867A JP S5598867 A JPS5598867 A JP S5598867A JP 590779 A JP590779 A JP 590779A JP 590779 A JP590779 A JP 590779A JP S5598867 A JPS5598867 A JP S5598867A
Authority
JP
Japan
Prior art keywords
short
oxide film
voltage
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP590779A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Toshio Ichiyama
Hideyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP590779A priority Critical patent/JPS5598867A/en
Publication of JPS5598867A publication Critical patent/JPS5598867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain an input protecting device by utilizing the threshold voltage of a short-channel MOSFET for clamping voltage. CONSTITUTION:The interval L between the source 116 and the drain 102 of a MOSFET 119 having a field oxide film 118 as a gate oxide film is set in the range for allowing a short-channel effect. Thus, the thicker the thickness of the gate oxide film is, the more the short-channel effect becomes to lower the threshold voltage. When the interval between the source and the drain is likewise selected suitably, the clamping voltage can be set arbitrarily lower than the gate insulating withstand voltage so as to protect the input gate.
JP590779A 1979-01-19 1979-01-19 Protecting device Pending JPS5598867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP590779A JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP590779A JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Publications (1)

Publication Number Publication Date
JPS5598867A true JPS5598867A (en) 1980-07-28

Family

ID=11623963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP590779A Pending JPS5598867A (en) 1979-01-19 1979-01-19 Protecting device

Country Status (1)

Country Link
JP (1) JPS5598867A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153473A (en) * 1981-03-17 1982-09-22 Toshiba Corp Semiconductor device with input and output protective circuit and its manufacturing method
JPS57153472A (en) * 1981-03-17 1982-09-22 Toshiba Corp Manufacture of semiconductor device
JPH02262374A (en) * 1989-02-16 1990-10-25 Advanced Micro Devices Inc Electrostatic protection system
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
US5349227A (en) * 1991-10-25 1994-09-20 Nec Corporation Semiconductor input protective device against external surge voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153473A (en) * 1981-03-17 1982-09-22 Toshiba Corp Semiconductor device with input and output protective circuit and its manufacturing method
JPS57153472A (en) * 1981-03-17 1982-09-22 Toshiba Corp Manufacture of semiconductor device
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
JPH02262374A (en) * 1989-02-16 1990-10-25 Advanced Micro Devices Inc Electrostatic protection system
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
US5349227A (en) * 1991-10-25 1994-09-20 Nec Corporation Semiconductor input protective device against external surge voltage

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