JPS55133572A - Mos analog switch - Google Patents

Mos analog switch

Info

Publication number
JPS55133572A
JPS55133572A JP4030879A JP4030879A JPS55133572A JP S55133572 A JPS55133572 A JP S55133572A JP 4030879 A JP4030879 A JP 4030879A JP 4030879 A JP4030879 A JP 4030879A JP S55133572 A JPS55133572 A JP S55133572A
Authority
JP
Japan
Prior art keywords
mos
switch
drain
analog switch
integrity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4030879A
Other languages
Japanese (ja)
Inventor
Masahiro Akitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4030879A priority Critical patent/JPS55133572A/en
Publication of JPS55133572A publication Critical patent/JPS55133572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Abstract

PURPOSE:To enhance the integrity of a MOS analog switch by forming an offset voltage cancelling MOS transistor in the drain or source of a MOS switching element. CONSTITUTION:An offset cancelling MOS transistor 9 is associated within the drain 8 of a MOS switching element having a gate 6, a source 7 and a drain 8. Thus, the integrity of an LSI employing an analog MOS switch such as a subscriber's circuit high withstand voltage MOS switch or a CODEC MOS switch or the like can be enhanced.
JP4030879A 1979-04-05 1979-04-05 Mos analog switch Pending JPS55133572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4030879A JPS55133572A (en) 1979-04-05 1979-04-05 Mos analog switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4030879A JPS55133572A (en) 1979-04-05 1979-04-05 Mos analog switch

Publications (1)

Publication Number Publication Date
JPS55133572A true JPS55133572A (en) 1980-10-17

Family

ID=12576979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4030879A Pending JPS55133572A (en) 1979-04-05 1979-04-05 Mos analog switch

Country Status (1)

Country Link
JP (1) JPS55133572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022173A (en) * 1988-06-14 1990-01-08 Fujitsu Ltd Analog switch
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022173A (en) * 1988-06-14 1990-01-08 Fujitsu Ltd Analog switch
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

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