JPS52117086A - Semiconductor device for touch type switch - Google Patents

Semiconductor device for touch type switch

Info

Publication number
JPS52117086A
JPS52117086A JP3475176A JP3475176A JPS52117086A JP S52117086 A JPS52117086 A JP S52117086A JP 3475176 A JP3475176 A JP 3475176A JP 3475176 A JP3475176 A JP 3475176A JP S52117086 A JPS52117086 A JP S52117086A
Authority
JP
Japan
Prior art keywords
type switch
touch type
semiconductor device
latch
incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3475176A
Other languages
Japanese (ja)
Inventor
Kenji Yamura
Hidetoshi Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3475176A priority Critical patent/JPS52117086A/en
Publication of JPS52117086A publication Critical patent/JPS52117086A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To prevent occurrence of a latch up phenomenon in a touch type switch device by incorporating a channel stopper and the like in CMOS device to reduce the current amplification factor or resistance value of a parasitic transistor.
JP3475176A 1976-03-29 1976-03-29 Semiconductor device for touch type switch Pending JPS52117086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3475176A JPS52117086A (en) 1976-03-29 1976-03-29 Semiconductor device for touch type switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3475176A JPS52117086A (en) 1976-03-29 1976-03-29 Semiconductor device for touch type switch

Publications (1)

Publication Number Publication Date
JPS52117086A true JPS52117086A (en) 1977-10-01

Family

ID=12423017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3475176A Pending JPS52117086A (en) 1976-03-29 1976-03-29 Semiconductor device for touch type switch

Country Status (1)

Country Link
JP (1) JPS52117086A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848959A (en) * 1981-09-18 1983-03-23 Toshiba Corp Semiconductor device
JPS5851561A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Semiconductor integrated circuit device
JPS59163836A (en) * 1983-03-09 1984-09-14 Toshiba Corp Semiconductor integrated circuit
JPS60123053A (en) * 1983-12-07 1985-07-01 Hitachi Micro Comput Eng Ltd Semiconductor device
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848959A (en) * 1981-09-18 1983-03-23 Toshiba Corp Semiconductor device
JPH0332225B2 (en) * 1981-09-18 1991-05-10 Tokyo Shibaura Electric Co
JPS5851561A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Semiconductor integrated circuit device
JPS59163836A (en) * 1983-03-09 1984-09-14 Toshiba Corp Semiconductor integrated circuit
JPH0316790B2 (en) * 1983-03-09 1991-03-06 Tokyo Shibaura Electric Co
JPS60123053A (en) * 1983-12-07 1985-07-01 Hitachi Micro Comput Eng Ltd Semiconductor device
JPH0412627B2 (en) * 1983-12-07 1992-03-05 Hitachi Maikon Shisutemu Kk
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit
JPH0519312B2 (en) * 1984-03-31 1993-03-16 Shingijutsu Jigyodan

Similar Documents

Publication Publication Date Title
JPS5222480A (en) Insulating gate field effect transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS52117086A (en) Semiconductor device for touch type switch
JPS5376679A (en) Semiconductor device
JPS5238889A (en) Vertical junction type field effect transistor
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5211880A (en) Semiconductor integrated circuit device
JPS5598867A (en) Protecting device
JPS5275987A (en) Gate protecting device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS51139283A (en) Semi-conductor device
JPS5313852A (en) Level conversion circuit
JPS5211883A (en) Semiconductor integrated circuit device
JPS5438779A (en) Semiconductor integrated circuit device
JPS53126280A (en) Complementary type mis semiconductor device
JPS5375777A (en) Mos type semiconductor device
JPS5384636A (en) Sense amplifier circuit
JPS53142883A (en) Manufacture for semiconductor device
JPS55133572A (en) Mos analog switch
JPS5367331A (en) Integrated circuit formation current matching circuit
JPS5365081A (en) Field effect semiconductor device
JPS52119106A (en) Supervisory circuit for line signal
JPS53121478A (en) Semiconductor device and its manufacture
JPS546444A (en) Static latch circuit