JPS532089A - Semiconductor switching unit - Google Patents

Semiconductor switching unit

Info

Publication number
JPS532089A
JPS532089A JP7621476A JP7621476A JPS532089A JP S532089 A JPS532089 A JP S532089A JP 7621476 A JP7621476 A JP 7621476A JP 7621476 A JP7621476 A JP 7621476A JP S532089 A JPS532089 A JP S532089A
Authority
JP
Japan
Prior art keywords
switching unit
semiconductor switching
turn
hfe
max
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7621476A
Other languages
Japanese (ja)
Other versions
JPS5728957B2 (en
Inventor
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7621476A priority Critical patent/JPS532089A/en
Publication of JPS532089A publication Critical patent/JPS532089A/en
Publication of JPS5728957B2 publication Critical patent/JPS5728957B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE: To prevent effectively the mistaken reignition at the turn-off time for a composite-type semiconductor device of the gate turn-off thyrstor and transistor, by satisfying hFE≤βmax between hFE of the transistor and maximum turn-off gain βmax of the tyristor.
COPYRIGHT: (C)1978,JPO&Japio
JP7621476A 1976-06-28 1976-06-28 Semiconductor switching unit Granted JPS532089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7621476A JPS532089A (en) 1976-06-28 1976-06-28 Semiconductor switching unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7621476A JPS532089A (en) 1976-06-28 1976-06-28 Semiconductor switching unit

Publications (2)

Publication Number Publication Date
JPS532089A true JPS532089A (en) 1978-01-10
JPS5728957B2 JPS5728957B2 (en) 1982-06-19

Family

ID=13598913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7621476A Granted JPS532089A (en) 1976-06-28 1976-06-28 Semiconductor switching unit

Country Status (1)

Country Link
JP (1) JPS532089A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016061U (en) * 1983-07-11 1985-02-02 住友金属工業株式会社 Seal-cum-shutoff valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates

Also Published As

Publication number Publication date
JPS5728957B2 (en) 1982-06-19

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