JPS5644218A - Electronic circuit using field effect transistor - Google Patents

Electronic circuit using field effect transistor

Info

Publication number
JPS5644218A
JPS5644218A JP12138279A JP12138279A JPS5644218A JP S5644218 A JPS5644218 A JP S5644218A JP 12138279 A JP12138279 A JP 12138279A JP 12138279 A JP12138279 A JP 12138279A JP S5644218 A JPS5644218 A JP S5644218A
Authority
JP
Japan
Prior art keywords
mosfet
voltage
source
mosfets
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12138279A
Other languages
Japanese (ja)
Inventor
Koichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12138279A priority Critical patent/JPS5644218A/en
Publication of JPS5644218A publication Critical patent/JPS5644218A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To make the operation speed high, by using the MOSFET with the dielectric strength characteristic improved to utilize the characteristic of dielectric strength BVDSX between the drain and the source versus voltage VGS between the gate and the source. CONSTITUTION:Sources and drains of two MOSFETs Q1 and Q2 are connected in parallel between power source terminal VDD and output terminal Vout, and load resistance RL is connected between output terminal Vout and the earth, and gate input terminals VG1 and VG2 are connected to respective gates of MOSFETs Q1 and Q2, thus constituting an OR circuit. Suppose that an enhancement type MOSFET is used as the MOSFET, a voltage appears at both ends of load resistance RL when the input signal, where the voltage to break down across the drain and the source of the MOSFET is one potential and the voltage not to break down is the other potential, is given to one or both of input terminals VG1 and VG2.
JP12138279A 1979-09-20 1979-09-20 Electronic circuit using field effect transistor Pending JPS5644218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12138279A JPS5644218A (en) 1979-09-20 1979-09-20 Electronic circuit using field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12138279A JPS5644218A (en) 1979-09-20 1979-09-20 Electronic circuit using field effect transistor

Publications (1)

Publication Number Publication Date
JPS5644218A true JPS5644218A (en) 1981-04-23

Family

ID=14809824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12138279A Pending JPS5644218A (en) 1979-09-20 1979-09-20 Electronic circuit using field effect transistor

Country Status (1)

Country Link
JP (1) JPS5644218A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5467030A (en) * 1992-08-26 1995-11-14 Yozan Inc. Circuit for calculating a maximum value
US5471161A (en) * 1992-08-26 1995-11-28 Yozan Inc. Circuit for calculating the minimum value
JP2016512903A (en) * 2013-03-26 2016-05-09 京東方科技集團股▲ふん▼有限公司 Display driving circuit, driving method thereof, and display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5467030A (en) * 1992-08-26 1995-11-14 Yozan Inc. Circuit for calculating a maximum value
US5471161A (en) * 1992-08-26 1995-11-28 Yozan Inc. Circuit for calculating the minimum value
JP2016512903A (en) * 2013-03-26 2016-05-09 京東方科技集團股▲ふん▼有限公司 Display driving circuit, driving method thereof, and display device

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