JPS5781622A - Current source - Google Patents

Current source

Info

Publication number
JPS5781622A
JPS5781622A JP15651480A JP15651480A JPS5781622A JP S5781622 A JPS5781622 A JP S5781622A JP 15651480 A JP15651480 A JP 15651480A JP 15651480 A JP15651480 A JP 15651480A JP S5781622 A JPS5781622 A JP S5781622A
Authority
JP
Japan
Prior art keywords
source
output terminal
current
type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15651480A
Other languages
Japanese (ja)
Inventor
Tsutomu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15651480A priority Critical patent/JPS5781622A/en
Publication of JPS5781622A publication Critical patent/JPS5781622A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To obtain a current source of a high output resistance, by providing the second MOSFET between an output terminal and the source of a D type MOSFET constituting a current source. CONSTITUTION:An E type MOSFET12 where the gate is connected to the drain is connected between the source of a D type MOSFET11 and an output terminal 20. The gate of the D type MOSFET11 is connected to the output terminal 20, and the drain is connected to the other output terminal 30. When the voltage across terminals 20 and 30 becomes higher, the current flowed to the FET11 tends to rise by the influence of the channel length modulation effect; however, the increment of this current increases the voltage drop of the FET12, and the voltage between the gate and the source of the FET11 is reduced to suppress the increment of the current.
JP15651480A 1980-11-07 1980-11-07 Current source Pending JPS5781622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15651480A JPS5781622A (en) 1980-11-07 1980-11-07 Current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15651480A JPS5781622A (en) 1980-11-07 1980-11-07 Current source

Publications (1)

Publication Number Publication Date
JPS5781622A true JPS5781622A (en) 1982-05-21

Family

ID=15629432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15651480A Pending JPS5781622A (en) 1980-11-07 1980-11-07 Current source

Country Status (1)

Country Link
JP (1) JPS5781622A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500641A (en) * 1983-02-18 1985-05-02 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド MOS depletion load circuit
US4600876A (en) * 1985-09-23 1986-07-15 Gte Communication Systems Corp. Integrated bootstrap bias circuit
FR2611283A1 (en) * 1987-02-19 1988-08-26 Em Microelectronic Marin Sa DEVICE COMPRISING AN ELECTRONIC CIRCUIT FOR PROCESSING AN ANALOG SIGNAL
CN104035472A (en) * 2014-06-24 2014-09-10 吴江圣博瑞信息科技有限公司 Full-CMOS (complementary metal oxide semiconductor) reference voltage source generator circuit
JP2019176287A (en) * 2018-03-28 2019-10-10 セイコーエプソン株式会社 Constant current circuit, semiconductor device, electronic apparatus, and method for manufacturing semiconductor device
CN110879625A (en) * 2019-12-13 2020-03-13 东南大学 CMOS voltage reference circuit with ultralow linear sensitivity

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500641A (en) * 1983-02-18 1985-05-02 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド MOS depletion load circuit
US4600876A (en) * 1985-09-23 1986-07-15 Gte Communication Systems Corp. Integrated bootstrap bias circuit
FR2611283A1 (en) * 1987-02-19 1988-08-26 Em Microelectronic Marin Sa DEVICE COMPRISING AN ELECTRONIC CIRCUIT FOR PROCESSING AN ANALOG SIGNAL
CN104035472A (en) * 2014-06-24 2014-09-10 吴江圣博瑞信息科技有限公司 Full-CMOS (complementary metal oxide semiconductor) reference voltage source generator circuit
JP2019176287A (en) * 2018-03-28 2019-10-10 セイコーエプソン株式会社 Constant current circuit, semiconductor device, electronic apparatus, and method for manufacturing semiconductor device
CN110879625A (en) * 2019-12-13 2020-03-13 东南大学 CMOS voltage reference circuit with ultralow linear sensitivity
CN110879625B (en) * 2019-12-13 2022-02-11 东南大学 CMOS voltage reference circuit with ultralow linear sensitivity

Similar Documents

Publication Publication Date Title
JPS54152845A (en) High dielectric strength mosfet circuit
MY103685A (en) Voltage dividing resistor device
JPS5785110A (en) Dc stabilized power supply circuit
JPS5781622A (en) Current source
JPS5471973A (en) Logical operation circuit
JPS5781621A (en) Current source
JPS5776925A (en) Mos type circuit
JPS57181231A (en) Semiconductor integrated circuit
EP0196680A3 (en) Switching regulator
JPS55163915A (en) Electric current output d/a converting circuit
JPS5725724A (en) Interface circuit
JPS5757028A (en) Driving circuit
JPS5557919A (en) Voltage-current control circuit
JPS5671975A (en) Mos type semiconductor system
JPS57196626A (en) Electronic circuit
JPS5644917A (en) Constant-voltage circuit
JPS56103537A (en) Level converting circuit
JPS5539413A (en) Schmitt trigger circuit
JPS55107309A (en) Feedback circuit
JPS5662372A (en) Junction type field effect semiconductor device
JPS5726928A (en) Logical circuit using junction gate type field effect transistor
FR2437028A1 (en) MOS integrated constant current source - has two MOSFETs whose source-drain paths are saturated and connected in series
JPS55166952A (en) Bistable circuit
JPS5538784A (en) Oscillation circuit
JPS5779457A (en) Voltage comparing circuit